広島大学 大学院先端物質科学研究科 半導体集積科学専攻

論文


2015年度

  1. M. Akazawa, K. Sakaike, and S. Higashi, “Formation of silicon-on-insulator layer with midair cavity for meniscus force-mediated layer transfer and high-performance transistor fabrication on glass”  Jpn. J. Appl. Phys., 54 (2015), 086503-1.
  2. Keisuke Maruyama, Hiroaki Hanafusa, Ryuhei Ashihara, Shohei Hayashi†, Hideki Murakami, and Seiichiro Higashi, “High-efficiency impurity activation by precise control of cooling rate during atmospheric pressure thermal plasma jet annealing of 4H-SiC wafer,” Jpn. J. Appl. Phys., 54 (2015) 06GC01-1.
  3. Hiroaki Hanafusa, Keisuke Maruyama, Shohei Hayashi, and Seiichiro Higashi, “Estimation of Phosphorus-implanted 4H-SiC Layer Recrystallization by EBSD Pattern Analysis,” Mat. Sci. Forum, 821, pp. 391-394 (2015).

2014年度

  1. Kohei Sakaike, Muneki Akazawa, Akitoshi Nakagawa and Seiichiro Higashi, “Meniscus-force-mediated layer transfer technique using single-crystalline silicon films with midair cavity: Application to fabrication of CMOS transistors on plastic substrates,” Jpn. J. Appl. Phys., 54 (2015) 04DA08-1-04DA08-5.
  2. Keisuke Tanaka, Shohei Hayashi, Seiji Morisaki, and Seiichiro Higashi, “Investigations on crack generation mechanism and crack reduction by buffer layer insertion in thermal-plasma-jet crystallization of amorphous silicon films on glass substrate”, Japanese Journal of Applied Physics 54 (2015) 01AE05.
  3. Seiji Morisaki, Shohei Hayashi, Shogo Yamamoto, Taichi Nakatani, and Seiichiro Higashi, “Effect of Grain Growth Control by Atmospheric Micro-Thermal- Plasma-Jet Crystallization of Amorphous Silicon Strips on TFT Characteristics,” ECS Trans., 64(10), (2014), pp. 23-29.
  4. Kohei Sakaike, Muneki Akazawa, Akitoshi. Nakagawa and Seiichiro Higashi, “Fabricating High-Performance Silicon Thin-Film Transistor by Meniscus Force Mediated Layer Transfer Technique,” ECS Trans., 64(10), (2014), pp. 17-22.
  5. Hideki Murakami, Shinya Hamada, Takahiro Ono, Kuniaki Hashimoto, Akio Ohta, Hiroaki Hanafusa, Seiichiro Higashi, and Seiichi Miyazaki, "Pre-Amorphization and Low-Temperature Implantation for Efficient Activation of Implanted As in Ge(100)," ECS Trans. 64(6), (2014) pp. 423-429.
  6. Akio Ohta, Hideki Murakami, Kuniaki Hashimoto, Katsunori Makihara, and Seiichi Miyazaki, "Characterization of Chemical Bonding Features and Interfacial Reactions in Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack Characterization of Chemical Bonding Features and Interfacial Reactionsin Ge-MIS Structure with HfO2/TaGexOy Dielectric Stack," ECS Trans., 64(6), (2014) pp. 241-248.
  7. D. Takeuchi, K. Makihara, A. Ohta, M. Ikeda and S. Miyazaki, “Characterization of Electron Emission from High Density Self-Aligned Si-Based Quantum Dots by Conducting-Probe Atomic Force Microscopy,” ECS Trans., 64 (6), (2014), pp. 923-928.
  8. K. Makihara, K. Kondo, M. Ikeda, A. Ohta and S. Miyazaki, “Photoluminescence Study of Si Quantum Dots with Ge Core,” ECS Trans., 64 (6), (2014), pp. 365-370. 
  9. Seiji Morisaki, Shohei Hayashi, Yuji. Fujita, and Seiichiro Higashi, “Improvement in Characteristic Variability of TFTs Using Grain Growth Control by Micro Thermal Plasma Jet Irradiation on a-Si Strips,” J. Display Technol. 10 (2014), pp. 950-955.
  10. K. Makihara,M. Ikeda and S. Miyazaki, “Selective Growth of Self-Assembling Si and SiGe Quantum Dots,” IEICE Trans. Electron., E97-C (2014), pp. 393-396.
  11. D. Takeuchi,K. Makihara,M. Ikeda,S. Miyazaki,H. Kaki and T. Hayashi,“High-Sensitive Detection of Electronic Emission through Si-Nanocrystals/Si-Nanocolumnar Structures by Conducting-Probe Atomic Force Microscopy”, IEICE Trans. Electron., E97-C (2014), pp. 397-400.
  12. M. Akazawa, K. Sakaike, S. Nakamura, and S. Higashi, “Fabrication of N-channel single crystalline silicon (100) thin-film transistors on glass substrate by meniscus force-mediated layer transfer technique,” Jpn. J. Appl. Phys., 53 (10), (2014) 108002-1 - 108002-3.
  13. Kohei Sakaike, Yoshitaka Kobayashi, Shogo Nakamura, Muneki Akazawa, and Seiichiro Higashi, “A technique for local area transfer and simultaneous crystallization of amorphous silicon layer with midair cavity by irradiation with near-infrared semiconductor diode laser,” Jpn. J. Appl. Phys., 53(4), (2014), 040303-1-040303-4.

2013年度

  1. Shohei Hayashi, Seiji Morisaki, Takahiro Kamikura, Shogo Yamamoto,Kohei Sakaike, Muneki Akazawa, and Seiichiro Higashi, “Investigation of silicon grain structure and electrical characteristics of TFTs fabricated using different crystallized silicon films by atmospheric pressure micro-thermal-plasma-jet irradiation,” Jpn. J. Appl. Phys., 53(3), (2014) , 03DG02-1- 03DG02-6.
  2. K. Sakaike, S. Nakamura, M. Akazawa, and S. Higashi, “Low-temperature layer transfer of midair cavity silicon films to a poly(ethylene terephthalate) substrate by meniscus force,” Jpn. J. Appl. Phys., 53 (1), (2014) 018004-1 - 018004-3.
  3. Hiroaki Hanafusa, Akio Ohta, Ryuhei Ashihara, Keisuke Maruyama, Tsubasa Mizuno, Shohei Hayashi, Hideki Murakami, and Seiichiro Higashi, “Properties of Al Ohmic contacts to n-type 4H-SiC employing a Phosphorus-Doped and Crystallized Amorphous-Silicon Interlayer,” Materials Science Forum Vols. 778-780 (2014) pp 649-652.
  4. Kohei Sakaike, Muneki Akazawa, Shogo Nakamura and Seiichiro Higashi,“Fabricating metal-oxide-semiconductor field-effect transistors on a polyethyleneterephthalate substrate by applying low-temperature layer transfer of a single-crystalline silicon layer by meniscus force,” Appl. Phys. Lett., 103, (2013) 233510-1-233510-4.
  5. Katsunori Makihara, Jin Gao, Kohei Sakaike, Shohei Hayashi, Hidenori Deki, Mitsuhisa Ikeda, Seiichiro Higashi, and Seiichi Miyazaki, “Highly-Crystallized Ge:H Film Growth from GeH4 Very High Frequency Inductively-Coupled Plasma: Crystalline Nucleation Initiated by Ni Nanodots,” Jpn. J. Appl. Phys., 52(11), (2013) ,11NA04-1-11NJ04-3.
  6. A. Ohta, M. Fukusima, K. Makihara, H. Murakami, S. Higashi, and S. Miyazaki, “Characterization of Resistive Switching Behaviors of RF Sputtered Si Oxide Resistive Random Access Memories with Ti-based Electrodes,” Jpn. J. Appl. Phys., 52(11), (2013) ,11NJ06-1-11NJ06-5.
  7. Akio Ohta, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki,"XPS Study of Energy Band Alignment between Hf-La Oxides and Si(100)," Trans. Mat. Res. Soc. Jpn., 38( 3), (2013 ) pp. 353-357.
  8. Akio Ohta, Katsunori Makihara, Motoki Fukusima, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki, "Resistive Switching Properties of SiOx/TiO2 Multi-Stack in Ti-electrode MIM Diodes," ECS Trans., 58(9), (2013)  pp. 293-300.
  9. Seiichi Miyazaki, Mitsuhisa Ikeda, and Katsunori Makihara, "Study on Charge Strage and Optical Response of Hybrid Nanodots Floating Gate MOS Devices for Their Optoelectronics Application," ECS Trans., 58(9), (2013) pp. 231-237.
  10. Kohei Sakaike, Yoshitaka Kobayashi, Shogo Nakamura, Shohei Hayashi, Muneki Akazawa, Seiji Morisaki, Mitsuhisa Ikeda, and Seiichiro Higashi, “Layer Transfer and Simultaneous Crystallization Technique for Amorphous Si Films with Midair Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation and Its Application to Thin-Film Transistor Fabricatio,” Jpn. J. Appl. Phys., 52(5), (2013) 05EC01-1-05EC01-6.
  11. Shohei Hayashi, Yuji Fujita, Takahiro Kamikura, Kohei Sakaike, Muneki Akazawa, Mitsuhisa Ikeda, and Seiichiro Higashi, “Leading Wave Crystallization Induced by Micro-Thermal-Plasma-Jet Irradiation of Amorphous Silicon Films,” Jpn. J. Appl. Phys., 52(5), (2013) 05EE02-1-05EE02-6.
  12. Kuniaki Hashimoto, Akio Ohta, Hideki Murakami, Seiichiro Higashi, Seiichi Miyazaki, “Control of Interfacial Reaction of HfO2 /Ge Structure by Insertion of Ta Oxide Layer,”  IEICE Trans. on Electronics, E96-C(5), (2013) pp. 674-679.
  13. Mitsuhisa Ikeda, Katsunori Makihara, and Seiichi Miyazaki, “Photoexcited Carrier Transfer in a NiSi-Nanodots/Si-Quantum-Dots Hybrid Floating Gate in MOS Structures,” IEICE Trans. on Electronics, E96-C(5), (2013) pp. 694-698.
  14. Akio Ohta,Katsunori Makihara,Seiichi Miyazaki,Masao Sakuraba and Junichi Murota “X-Ray Photoemission Study of SiO2/Si/Si0.55Ge0.45/Si Heterostructures,” IEICE Trans. on Electronics, E96-C(5), (2013) pp. 680-685.
  15. Akio Ohta,Katsunori Makihara, Mitsuhisa Ikeda, Hideki Murakami, Seiichiro Higashi,Seiichi Miyazaki, “Evaluation of Chemical Composition and Bonding Features of Pt/SiOx/Pt MIM Diodes and Its Impact on Resistance Switching Behavior,” IEICE Trans. on Electronics, E96-C(5), (2013) pp. 702-707.
  16. Motoki Fukushima, Akio Ohta, Katsunori Makihara, Seiichi Miyazaki , “Characterization of Resistive Switching of Pt/Si-Rich Oxide/TiN System,” IEICE Trans. on Electronics, E96-C(5), (2013) pp. 708-713.
  17. H. Takami, K. Makihara, M. Ikeda and S. Miyazaki, “Characterization of Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots,” Jpn. J. Appl. Phys., 52(4), (2013) 04CG08-1-04CG08-4.

2012年度

  1. Yuji Fujita, Shohei Hayashi, Kohei Sakaike, and Seiichiro Higashi,“Grain Growth Control during Micro-Thermal-Plasma-Jet Irradiation Using Amorphous Si Strips and Slit Masks,” ECS Trans., 50(8), (2012) pp. 29-34.
  2. K. Sakaike, Y. Kobayashi, S. Nakamura, M. Akazawa, M.Ikeda and S. Higashi, “Layer Transfer and Simultaneous Crystallization of Amorphous Si Films with Mid-Air Structure Induced by Near-Infrared Semiconductor Diode Laser Irradiation,” ECS Trans., 50(8), (2012) pp. 43-48.
  3. A. Ohta, M. Matsui, H. Murakami, S. Higashi, and S. Miyazaki, “Control of Schottky Barrier Height at Al/p-Ge Junctions by Ultrathin Layer Insertion,”ECS Trans., 50(9),(2012) pp.449-457.
  4. K. Makihara, M. Fukushima, A. Ohta, M. Ikeda and S. Miyazaki, “Characterization of Resistance-Switching Properties of SiOx Films Using Pt Nanodots Electrodes,” ECS Trans., 50(9), (2012) pp. 459-464. 
  5. K. Makihara, H. Deki, M Ikeda and S, Miyazaki, “Evaluation of Charge Trapping Properties of Microcrystalline Germanium Thin Films by Kelvin Force Microscopy,” J. Non-Cry. Solids, 358(17),(2012) pp. 2086-2089.
  6. K. Makihara, M. Ikeda and S. Miyazaki, Study of Electron Transport Characteristics Through Self-Aligned Si-Based Quantum Dots,” J. Appl. Phys., 112,(2012) 104301-1-104301-5.
  7. Shohei Hayashi, Yuji Fujita, Takahiro Kamikura, Kohei Sakaike, Muneki Akazawa, Mitsuhisa Ikeda, Hiroaki Hanafusa, and Seiichiro Higashi, “Direct observation of grain growth from molten silicon formed by micro-thermal-plasma-jet irradiation”, Appl. Phys. Lett., 101,(2012) 172111-1-172111-4.
  8. A. Ohta, H. Murakami, S. Higashi, and S. Miyazaki, “Determination of Energy Band Alignment in Ultrathin Hf-based Oxide/Pt System,”  J.Phys: Conf. Ser.,417(1), (2013) 012012-1-012012-6.
  9. S. K. Sahari, A. Ohta, M. Matsui, K. Mishima, H. Murakami, S. Higashi, and S. Miyazaki, “Kinetics of thermally oxidation of Ge(100) surface,” J.Phys: Conf. Ser., 417(1), (2013) 012014-1-012014-6.
  10. K. Mishima, H. Murakami, A. Ohta, S. K. Sahari, T. Fujioka, S. Higashi, and S. Miyazaki, “Characterization of Ultrathin Ta-oxide Films Formed on Ge(100) by ALD and Layer-by-Layer Methods,” J.Phys: Conf. Ser.,417(1), (2013) 012013-1-012013-6.
  11. A. Ohta, Y. Goto, S. Nishigaki, G. Wei, H. Murakami, S. Higashi, and S. Miyazaki, “Characterization of Resistance-Switching of Si Oxide Dielectrics Prepared by RF Sputtering,” IEICE Trans. on Electronics, E95-C(5), (2012) pp. 879-884.
  12. A. Ohta, Y. Goto, S. Nishigaki, H. Murakami, S. Higashi, and S. Miyazaki, “Evaluation of Chemical Bonding Features and Resistance Switching Behaviors of Ultrathin Si Oxide Dielectric Sandwiched Between Pt Electrodes,” Jpn. J. Appl. Phys., 51(6),(2012) 06FF02-1-06FF02-6 .
  13. Yoshiyuki Suda, Hiroaki Hanafusa, Mitsuhiro Yoshikawa, Manabu Kanazawa, “SiGe Sputter Epitaxy Technique and Its Application to SiGe Devices,” Procedia Engineering, 36, (2012) pp. 396-403.
  14. Hiroaki Hanafusa, Nobumitsu Hirose, Akifumi Kasamatsu, Takashi Mimura, Toshiaki Matsui, and Yoshiyuki Suda, “Ge Flat Layer Growth on Heavily Phosphorus-Doped Si(001) by Sputter Epitaxy,” Jpn. J. Appl. Phys., 51(3), (2012) 055502-1-055502-4.
  15. K. Makihara, H. Deki, M Ikeda and S, Miyazaki, “Electroluminescence from One-dimensionally Self-Aligned Si-based Quantum Dots with High Areal Dot Density”, Jpn. J. Appl. Phys., 51(4), (2012) 04DG08-1-04DG08-5.
  16. Y. Kobayashi, K. Sakaike, S. Nakamura, M. Ikeda, A. Ohta, and S. Higashi, “Layer Transfer and Simultaneous Activation of Phosphorous Atoms in Silicon Films by Near-Infrared Semiconductor Diode Laser Irradiation,” Mat. Res. Soc.Symp.Proc., 1426,(2012)pp. 275-280.

2011年度

  1. Yuji Fujita, Shohei Hayashi, and Seiichiro Higashi, “Fabrication of High-Performance Thin-Film Transistors on Glass Substrate by Atmospheric Pressure Micro-Thermal-Plasma-Jet-Induced Lateral Crystallization Technique," Jpn. J. Appl. Phys., 51(2), (2012) 02BH05-1-02BH05-5.
  2. Akio Ohta, Tomohiro Fujioka, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki, “X-ray Photoelectron Spectroscopy Study of Interfacial Reactions between Metal and Ultrathin Ge Oxide,” Jpn. J. Appl. Phys., 50(10), (2011) 10PE01-1-10PE01-6.
  3. Akio Ohta, Yuta Goto, Goubin Wei, Hideki Murakami, Seiichiro Higashi, and Seiichi Miyazaki, “Evaluation of Chemical Structure and Resistance Switching Characteristics of Undoped Titanium Oxide and Titanium - Yttrium mixed Oxide,” Jpn. J. Appl. Phys., 50(10), (2011) 10PH02-1-10PH02-6.
  4. Masafumi Matsui, Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Seiichiro Higashi, and Seiichi Miyazaki, “Characterization of Chemical Bonding Features at Metal/GeO2 Interfaces by X-ray Photoelectron Spectroscopy,” Microelec. Eng., 88, (2011) pp. 1549-1552.
  5. Guobin Wei, Hideki Murakami, Tomohiro Fujioka, Akio Ohta, Yuta Goto, Seiichiro Higashi, and Seiichi Miyazaki, “Impact of Insertion of Ultrathin TaOx Layer at the Pt/TiO2 Interface on Resistive Switching Characteristics,” Microelec. Eng., 88, (2011) pp. 1152-1154.
  6. Katsunori Makihara, Mitsuhisa Ikeda, Akio Ohta, Shotaro Takeuchi, Yosuke Shimura, Shigeaki Zaima, Seiichi Miyazaki, “High Density Formation of Ge Quantum Dots on SiO2," Solid State Electronics, 60, (2011) pp. 65-69.
  7. K. Makihara, K. Matsumoto, M. Yamane, T. Okada, N. Morisawa, M. Ikeda, S. Higashi and S. Miyazaki, “Formation of High Density Pt Nanodots on SiO2 Induced by Millisecond Rapid Thermal Annealing using Thermal Plasma Jet for Floating Gate Memory," Jpn. J. Appl. Phys., 50(8), (2011 ) 08KE06-1-08KE06-4.
  8. A.Ohta, Y. Goto, M.F. Kazalman, G. Wei, H. Murakami, S. Higashi and S. Miyazaki, “The Impact of Y Addition into TiO2 on Electronic States and Resistive Switching Characteristics," Jpn. J. Appl. Phys., 50(6),(2011) 06GG01-1-06GG01-5.
  9. Akio OHTA, Daisuke KANME, Hideki MURAKAMI, Seiichiro HIGASHI, and Seiichi MIYAZAKI, “Characterization of Mg Diffusion into HfO2/SiO2/Si(100) Stacked Structures and Its Impact on Detect State Densities,” IEICE Trans. Electron., E94-C(5),(2011)pp. 717-723.
  10. Guobin Wei, Yuta Goto, Akio Ohta, Katsunori Makihara, Hideki Murakami, SeiichiroHigashi, and Seiichi Miyazaki, “Impact of Annealing Ambience on Resistive Switching in Pt/TiO2/Pt Structure,” IEICE Trans. Electron., E94-C(5), (2011)pp. 699-704.
  11. Kazuya Matsumoto, Akio Ohta, Seiichi Miyazaki, and Seiichiro Higashi, “Activation of As Atoms in Ultrashallow Junction during Milli- and Microsecond Annealing Induced by Thermal-Plasma-Jet Irradiation,” Jpn. J. Appl. Phys., 50 (4),(2011) 04DA07-1-04DA07-4.
  12. Seiichiro Higashi, Shohei Hayashi, Yasuo Hiroshige, Yusuke Nishida, Hideki Murakami, and Seiichi Miyazaki.“Application of Thermal Plasma Jet Irradiation to Crystallization and Gate Insulator Improvement for High-Performance Thin-Film Transistor Fabrication,” Jpn. J. Appl. Phys., 50 (3),(2011) 03CB10-1-03CB10-8.
  13. Siti Kudnie Sahari, Hideki Murakami, Tomohiro Fujioka, Tatsuya Bando, Akio Ohta,Katsunori Makihara, Seiichiro Higashi, and Seiichi Miyazaki,“Native Oxidation Growth on Ge (111) and (100) Surfaces,” Jpn. J. Appl. Phys., 50(4) ,(2011) 04DA12-1-04DA12-4.
  14. M. Muraguchi, Y. Sakurai, Y. Takada, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, S. Nomura, K. Shiraishi and T. Endoh, “Collective Tunneling Model in Charge Trap Type NVM Cell,” Jpn. J. Appl. Phys., 50(4) , (2011) 04DD04-1-04DD04-4.
  15. M. Muraguchi, Y. Sakurai, Y. Takada, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, Y. Shigeta and T. Endoh, “Study on Collective Electron Motion in Si-Nano Dot Floating Gate MOS Capacitor,”  IEICE Trans. Electron., E94-C(5),(2011)pp. 730-736.
  16. N. Morisawa, M. Ikeda, K. Makihara and S. Miyazaki, “Optical Response of Si-Quantum-Dots/NiSi-Nanodots Stack Hybrid Floating Gate in MOS Structures," Key Engineering Materials, 470,(2011)pp. 135-139. 

2010年度 

  1. H. Hanafusa, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, H. M. H. Chong, H. Mizuta, and Y. Suda, "Si/Ge Hole-Tunneling Double-Barrier Resonant Tunneling Diodes Formed on Sputtered Flat Ge Layers, " Appl. Phys. Express, 4,(2011) 024102-1-024102-3.
  2. H. Hanafusa, N. Hirose, A. Kasamatsu, T. Mimura, T. Matsui, H. M. H. Chong, H. Mizuta, and Y. Suda, "Strain Distribution Analysis of Sputter-Formed Strained Si by Tip-Enhanced Raman Spectroscopy," Appl. Phys. Express, 4,(2011) 025701-1-025701-3.
  3. K. Makihara and S. Miyazaki, “Characterization of Electronic Charged States of Impurity Doped Si Quantum Dots Using AFM/Kelvin Probe Technique,” Jpn. J. Appl. Phys., 49( 6), (2010) 065002-1-065002-4.
  4. N. Morisawa, M. Ikeda, S. Nakanishi, A. Kawanami, K. Makihara and S. Miyazaki,“ Light Induced Carrier Transfer in NiSi-Nanodots/Si-Quantum-Dots Hybrid FG in MOS Structures, ” Jpn. J. Appl. Phys., 49(4), (2010) 04DJ04-1-04DJ04-4.
  5. A. Kawanami, K. Makihara, M. Ikeda and S. Miyazaki, Formation of Cobalt and Cobalt-silicide Nanodots on Ultrathin SiO2 Induced by Remote Hydrogen Plasma," Jpn. J. Appl. Phys., 49( 8), (2010) 08JA04-1-08JA04-4.
  6. K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki, “Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots, ” IEICE Trans. Electron., E93-C(5), (2010) pp. 569-572.
  7. M. Muraguchi, T. Endoh, Y. Takada, Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara, S. Miyazaki, and Y. Shigeta, “Importance of Electronic State of Two-Dimensional Electron Gas for Electron Injection Process in Nano-Electronic Devices, ” Physica E., 42(10), (2010) pp. 2602–2605.
  8. T. Okada, S. Higashi, H. Kaku, K. Makihara, H. Furukawa, Y. Hiroshige and S. Miyazaki, "Effect of Chemical Composition of SiOx Films on Rapid Formation of Si Nanocrystals Induced by Thermal Plasma Jet Irradiation,” Phys. Status Solidi, C, 7( 3-4), (2010) pp. 732-734.
  9. K. Makihara, K. Shimanoe, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, "Formation Mechanism of Metal nanodots Induced by Remote Plasma Exposure, Journal of Optoelectronics and Advanced Materials,”  12( 3), (2010) pp. 626-630.
  10. Y. Sakurai, S. Nomura, Y. Takada, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, “Anomalous temperature dependence of electron tunneling between a two-dimensional electron gas and Si dots,” Physica E, 42(4), (2010) pp. 918-921.
  11. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, “Formation of High Density Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Memory Application,” J. of Materials Science Forum  638-642, (2010) pp. 1725-1730.
  12. S. Miyazaki, K. Makihara, M. Ikeda, “Formation and Characterization of Hybrid Nanodot Stack Structure for Floating Gate Application.” Thin Solid Films, 518, (201) pp. S30-S34.
  13. Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki, “Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots,”Jpn. J. Appl. Phys., 49( 1), RP090435.
  14. Yasuo Hiroshige, Seiichiro Higashi, Kazuya Matsumoto, and Seiichi Miyazaki, “Formation of High-Quality SiO2 and SiO2/Si Interface by Thermal-Plasma-Jet-Induced Millisecond Annealing and Postmetallization Annealing,” Jpn. J. Appl. Phys., 49(8), (2010) 08JJ01-1-08JJ01-4.
  15. Shohei Hayashi, Seiichiro Higashi, Hideki Murakami, and Seiichi Miyazaki, “Formation of High Crystallinity Silicon Films by High Speed Scanning of Melting Region Formed by Atmospheric Pressure DC Arc Discharge Micro-Thermal-Plasma-Jet and Its Application to Thin Film Transistor Fabrication,” Appl. Phys. Express, 3(6), (2010) 061401-1-061401-3.
  16. Kazuya Matsumoto, Seiichiro Higashi, Hideki Murakami, and Seiichi Miyazaki, “Activation of B and As in Ultrashallow Junction During Millisecond Annealing Induced by Thermal Plasma Jet Irradiation,” Jpn. J. Appl. Phys., 49(4 ),(2010) 04DA02-1-04DA02-4.
  17. Seiichiro Higashi, Kenji Sugakawa, Hirotaka Kaku, Tatsuya Okada, and Seiichi Miyazaki, “Characterization of Microcrystalline Silicon Thin Film Transistors Fabricated by Thermal Plasma Jet Crystallization Technique,” Jpn. J. Appl. Phys., 49(3),(2010) 03CA08-1-03CA08-4.
  18. K. Makihara, M. Ikeda, H. Deki, A. Ohta and S. Miyazaki, “Self-Align Formation of Si Quantum Dots,” ECS Trans., 33(6), (2010) pp. 661-667.
  19. T. Matsumoto, S. Higashi, K. Makihara, M. Akazawa and S. Miyazaki, “Formation of Pseudo-Expitaxial Ge Films on Si(100) by Droplet of Ge Microliquid,” ECS Trans., 33(6), (2010) pp. 165-170.
  20. K. Makihara, M. Ikeda, A. Kawanami and S. Miyazaki, “Random Telegraph Signals in Two-Dimensional Array of Si Quantum Dots,”  IEICE Trans. Electron., E93-C(5), (2010) pp. 569-572.
  21. Y. Sakurai, Y. Takada, J-I Iwata, K. Shiraishi, S. Nomura, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara, S. Miyazaki, “Electron Tunneling between Si Quantum dots and Tow Dimensional Electron Gas under Optical Excitation at Low Temperatures,” ECS Trans., 28(1), (2010) pp. 369-374.
  22. Y. Sakurai, J. Iwata, M. Muraguchi, Y. Shigeta, Y. Takada, S. Nomura, T. Endoh, S. Saito, K. Shiraishi, M. Ikeda, K. Makihara and S. Miyazaki, “Temperature Dependence of Electron Tunneling between Two Dimensional Electron Gas and Si Quantum Dots,” Jpn. J. Appl. Phys., 49( 1),(2010) 014001-1-014001-4.
  23. Hiroshi Itokawa, Akio Ohta, Mitsuhisa Ikeda, Ichiro Mizushima, and Seiichi Miyazaki, “Contribution of Carbon to Growth of Boron-Containing Cluster in Heavily Boron-Doped Silicon,” Jpn. J. Appl. Phys., 49(8), (2010) 081301-1-081301-5.
  24. Fatimah A. Noor, Mikrajuddin Abdullah, Sukirno, Khairurrijal, Akio Ohta, and Seiichi Miyazaki, “Electron and hole components of tunneling currents through an interfacial oxide-high-k gate stack in metal-oxide-semiconductor capacitors,” J. Appl. Phys., 108,(2010) 093711-1 - 093711-5.
  25. H. Murakami, T. Fujioka, A. Ohta, T. Bando, S. Higashi, and S. Miyazaki, “Characterization of Interfaces between Chemically Cleaned or Thermally Oxidized Germanium and Metals,” ECS Trans., 33 (3), (2010) pp. 253-262.

2009年度 

  1. H. Hanafusa, Y. Suda, N. Hirose, A. Kasamatsu, T. Mimura, and T. Matsui, "Crystalline Ge Layer Growth on Si(001) by Sputter Epitaxy Method," Book of 1st Int. Workshop on Si based Nano-electronics and –photonics eds by S. Chiussi, P. Alpuim, J. Murota, P. González, J. Serra, and B. León (Netbiblo, Spain, 2009) pp. 137-138.
  2. S. Mahboob, K. Makihara, A. Ohta, S. Higashi, Y. Hata, A. Kuroda and S. Miyazaki, Surface Potential Changes Induced by Physisorption of Si-tagged Protein A on HF-last Si(100) and Thermally Grown SiO2 Surface,” ECS Trans., 19(22), (2009) pp. 35-43.
  3. Y. Sakurai, S. Nomura, Y. Takada, J. Iwata, K. Shiraishi, M. Muraguchi, T. Endoh, Y. Shigeta, M. Ikeda, K. Makihara and S. Miyazaki, “Physics of Nano-contact Between Si Quantum Dots and Inversion Layer,” ECS Trans., 25(7), (2009) pp. 463-469.
  4. S. Miyazaki, K. Makihara and M. Ikeda, “Charge Strage Characteristics of Hybrid Nanodots Floating Gate,” ECS Trans., 25(7), (2009) pp. 433-439.
  5. K. Makihara, K. Shimanoe, M. Ikeda, A. Ohta, S. Higashi and S. Miyazaki, “Electronic Charged States of Pt-silicide Nanodots as Evaluated by Using an AFM/Kelvin Probe Technique ,” Trans. Mat. Res. Soc. Jpn., 34( 2), (2009) pp. 309-312.
  6. A. Ohta, D. Kanme, H. Murakami, S. Higashi and S. Miyazaki, “Characterization of Interfacial Reaction and Chemical Bonding Features of LaOx/HfO2 Stack Structure Formed on Thermally-grown SiO2/Si(100),” Microelectronic Eng., 84 ,(2009) pp. 1650-1653.  
  7. S. Miyazaki, M. Ikeda, K. Makihara, K. Shimanoe and R. Matsumoto, “Formation of Metal Silicide Nanodots on Ultrathin SiO2 for Floating Gate Application,” Solid State Phenomena, 154, (2009) pp. 95-100.
  8. K. Shimanoe, K. Makihara, M. Ikeda, R. Matsumoto, S. Higashi and S. Miyazaki, “Formation of Pd Nanodots Induced by Remote Hydrogen Plasma Treatment and Its Application to Floating Gate MOS Memories,” IEICE Trans. Electron., E92-C(5), (2009) pp. 616-619.
  9. Y. Sakurai, S. Nomura, K. Shiraishi, M. Ikeda, K. Makihara and S.Miyazaki, “Temperature Dependence of Capacitance of Si Quantum Dot Floating Gate MOS Capacitor ,”Journal of Physics : Conference Series, 150, (2009) 022071-1-022071-4.
  10. H. Furukawa, S. Higashi, T. Okada, H. Murakami and S. Miyazaki, “Millisecond Rapid Thermal Annealing of Si wafer Induced by High Power Density Thermal Plasma Jet Irradiation and Its application to Ultra Shallow Junction Formation ,” Jpn. J. Appl. Phys., 48(4 ),(2009) 04C011-1-04C011-4.
  11. M. Kadoshima, T. Matsuki, S. Miyazaki, K. Shiraishi, T. Chikyo, K. Yamada, T. Aoyama, Y. Nara and Y. Ohji, “Effective-Work-Function Control by Varying the TiN Thickness in Poly-Si/TiN Gate Electrodes for Scaled High-k CMOSFETs,” IEEE Electron Device Lett., 30(5),(2009) pp. 466-468.
  12. T. Hosoi, A. Ohta, S. Miyazaki, H. Shiraishi and K. Shibahara, “Photoemission Study of Fully Silicided Pd2Si Gates with Interface Modification Induced by Dopants ,” Appl. Phys. Lett., 94,(2009) 192102-1-192102-3.  

2008年度

  1. H. Hanafusa, Y. Suda, A. Kasamatsu, N. Hirose, T. Mimura, and T. Matsui, "Strain-Relaxed Si1-xGex and Strained Si Grown by Sputter Epitaxy, " Jpn. J. Appl. Phys., 47(4), (2007) pp. 3020-3023.
  2. K. Makihara, K. Shimanoe, Y. Kawaguchi, M. Ikeda, S. Higashi and S. Miyazaki, “Self-Assembling Formation of Ninanodots on SiO2 Induced by Remote H2-plasma Treatment and Their Electrical Charging Characteristics ,” Jpn. J. Appl. Phys., 47(4 ),(2008) pp. 3099-3102.
  3. R. Matsumoto, M. Ikeda, S. Higashi and S. Miyazaki, “Characterization of Multistep Electron Charging and Discharging of a Silicon Quantum Dots Floating Gate by Applying Pulsed Gate Biases ,” Jpn. J. Appl. Phys., 47(4 ),(2008) pp. 3103-3106.
  4. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, “Progress on Charge Distribution in Multiply-Stacked Si Quantum Dots / SiO2 Structure as Evaluated by AFM/KFM,” IEICE Trans. Electron., E91-C (5), (2008) pp. 712-715.  
  5. K. Makihara, A. Kawanami, M. Ikeda, S. Higashi and S. Miyazaki, “Nucleation Control for High Density Formation of Si-based Quantum Dots on Ultrathin SiO2,” ECS Trans., 16(10), (2008) pp. 255-260.  
  6. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki, “Impact of impurity Doping into Si Quantum Dots with Ge Core on Their Electrical Charging Characteristics ,” Thin Solid Films, 517(1), (2008) pp. 306-308.  
  7. S. Miyazaki, K. Makihara and M. Ikeda, “Control of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application ,” Thin Solid Films, 517(1), (2008) pp. 41-44.  
  8. T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki, “Low Temperature High-rate Growth of Crystalline Ge Films on Quartz and Crystalline Si Substrates from VHF Inductively-Coupled Plasma of GeH4,” Thin Solid Films, 517(1), (2008) pp. 216-218.  
  9. T. Hosoi, K. Sano, A. Ohta, K. Makihara, H. Kaku, S. Miyazaki and K. Shibahara, “Interface Properties and Effective Work Function of Sb-Predoped Fully Silicided NiSi Gate ,” Surface and Interface Analysis, 40 ,(2008) pp. 1126-1130.
  10. T. Okada, S. Higashi, H. Kaku, H. Furukawa and S. Miyazaki, “Formation of Si Nanocrystals in SiOx Films Induced by Thermal Plasma Jet Annealing and Its Application to Floating Gate Memory ,” ECS Trans., 16(9), (2008) pp. 177-182.  
  11. T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, T. Matsui, A. Masuda and M. Kondo,” Jpn. J. Appl. Phys., 47(8), (2008) pp. 6949-6952.
  12. H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami and S. Miyazaki, “In-situ Monitoring of Si Wafer Temperature during Millisecond Rapid Thermal Annealing ,” ECS Trans., 13( 1), (2008) pp. 31-36.
  13. H. Furukawa, S. Higashi, T. Okada, H. Kaku, H. Murakami and S. Miyazaki, “In-situ Measurement of Temperature Variation in Si Wafer during Millisecond Rapid Thermal Annealing Induced by Thermal Plasma Jet Irradiation ,” Jpn. J. Appl. Phys., 47(4), (2008) pp. 2460-2463.  
  14. T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami, S. Miyazaki, “Effect of He addition on the heating characteristics of substrate surface irradiated by Ar thermal plasma jet ,” Thin Solid Films, 516 ,(2008) pp. 3680-3683. 
  15. T. Karakawa, S. Higashi, H. Murakami and S. Miyazaki, “Nucleation study of hydrogenated microcrystalline silicon (μc-Si:H) films deposited by VHF-ICP ,” Thin Solid Films, 516 ,(2008) pp. 3497-3501.
  16. K. Sakaike, S. Higashi, H. Murakami and S. Miyazaki, “Crystallization of amorphous Ge films induced by semiconductor diode laser annealing ,” Thin Solid Films,516,(2008) pp. 3595-3600.
  17. K. Yamabe, K. Murata, T. Hayashi, T. Tamura, M. Sato, A. uedono, K. Shiraishi, N. Umezawa, T. Chikyow, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada and R. Hasunuma, “Effect of Annealing on Electronic Characteristics of HfSiON Films fabricated by Damascene Gate Process,” ECS Trans., 16(5), (2008) pp. 521-526.
  18. S. Miyazaki, H. Yoshinaga, A. Ohta, Y. Akasaka, K. Shiraishi, K. Yamada, S. Inumiya, M. Kadoshima and Y. Nara, “Photoemission Study of Metal/HfSiON Gate Stack,” ECS Trans., 13( 2), (2008) pp. 67-73.
  19. K. Shiraishi, T. Nakayama, T. Nakaoka, A. Ohta and S. Miyazaki, “Theoretical Investigation of Metal/Dielectric Interfaces -Breakdown of Schottky Barrier Limits-., ECS Trans., 13(2), (2008) pp. 21-27.
  20. M. Sato, C. Tamura, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada, R. Hasunuma, T. Aoyama, Y. Nara and Yuzuru Ohji, “Cathode Electron Injection Breakdown Model and Time Dependent Dielectric Breakdown Lifetime Prediction in High-k/Metal Gate Stack p-Type Metal-Oxide-Silicon Field Effect Transistors,” Jpn. J. Appl. Phys., 47(5), (2008), pp. 3326-3331. 

2007年度

  1. J. Xu, K. Makihara, H. Deki, Y. Kawaguchi, H. Murakami, S. Higashi and S. Miyazaki, “Light Emitting Diode with MOS Structures Containing Multiple-Stacked Si Quantum Dots ,” Solid State Phenomena, 121-123, (2007) pp. 557-560.
  2. A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara, “Characterization of Chemical Bonding Features and Defect State Density in HfSiOxNy/SiO2 Gate Stack ,” Microelectronic Eng., 84 ,(2007) pp. 2386-2389.  
  3. T. Sakata, K. Makihara, H. Deki, S. Higashi and S. Miyazaki, “High Rate Growth of Highly-Crystallized Ge Films on Quartz from VHF Inductively-Coupled Plasma of GeH4 + H2,” Materials Science Forum, 561-565 ,(2007) pp. 1209-1212.  
  4. R. Nishihara, K. Makihara, Y. Kawaguchi, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki, “Characterization of Electronic Charged States of Nickel Silicide Nanodots Using AFM/Kelvin Probe Technique ,” Materials Science Forum, 561-565, (2007) pp.1213-1216.  
  5. S. Miyazaki, M. Ikeda and K. Makihara, “Characterization of Electronic Charged States of Si-Based Quantum Dots for Floating Gate Application,” ECS Trans.,11(6), (2007) p.233-243.
  6. M. Kadoshima, Y. Suginta, K. Shiraishi, H. Watanabe, A. Ohta, S. Miyazaki, K. Nakajima, T. Chikyow, K. Yamada, T. Aminaka, E. Kurosawa, T. Matsuki, T. Aoyama, Y. Nara and Y. Ohji, “Improvement in Fermi-Level Pinning of p-MOS Metal Gate Electodes on HfSiON by Employing Ru Gate Electrodes,”  ECS Trans.,11( 4 ),(2007) pp. 169-180.  
  7. K. Shiraishi, Y. Akasaka, G. Nakamura, T. Nakayama, S. Miyazaki, H. Watanabe, A. Ohta, K. Ohmori, T. Chikyow, Y. Nara and K. Yamabe, “Theoretical Studies on Metal/High-k Gate Stacks ,” ECS Trans.,6( 1), (2007) pp. 191-204.
  8. K. Iwamoto, T. Nishimura, A. Ohta, K. Tominaga, T. Nabatame, S. Miyazaki, and A. Toriumi, “Performance Improvement of HfAlOxN n-Channel Metal-Oxide-Semiconductor Field-Effect Transistors by Controlling the Bonding Configuration of Nitrogen Atoms Coordinated to Hf Atoms,” Jpn. J. Appl. Phys.,46(12 ),(2007) pp. 7666-7670.  
  9. A. Ohta, Y. Munetaka, A. Tsugou, K. Makihara, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara, “Characterization of chemical bonding features and defect state density in HfSiOxNy/SiO2 gate stack,”  Microelectronic Eng., 84, (2007) pp. 2386-2389.  
  10. T. Okada, S. Higashi, H. Kaku, T. Yorimoto, H. Murakami and S. Miyazaki, “Growth of Si crystalline in SiOx films induced by millisecond rapid thermal annealing using thermal plasma jet,” Solid-State Electronics, 52, (2008) pp. 377-380.
  11. T. Yorimoto, S. Higashi, H. Kaku, T. Okada, H. Murakami, S. Miyazaki, M. Maki and T. Sameshima, “Electrical Characteristics of Lightly-Doped Si Films Crystallized by Thermal Plasma Jet Irradiation ,” Trans. Mat. Res. Soc. Jpn., 32 (2), (2007) pp. 465-468.
  12. T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami and S. Miyazaki, “Control of Substrate Surface Temperature in Millisecond Annealing Technique Using Thermal Plasma Jet,” Thin Solid Films, 515 (2007) pp. 4897-4900.  
  13. N. Umezawa, K. Shiraishi, S. Miyazaki, T. Ohno, T. Chikyow, K. Yamada and Yasuo Nara, “Hafnium 4f Core-level Shifts Caused by Nitrogen Incorporation in Hf-based High-k Gate Dielectrics,” Jpn. J. Appl. Phys., 46(6A), (2007) pp. 3507-3509.
  14. A. Uedono, T. Naito, T. Otsuka, K. Ito, K. Shiraishi, K. Yamabe, S. Miyazaki, H. Watanabe, N. Umezawa, T. Chikyow, T. Ohdaira, R. Suzuki, Y. Akasaka, S. Kamiyama, Y. Nara and K. Yamada, “Characterization of Metal/High-k Structures Using Monoenergetic Positron Beams,” Jpn. J. Appl. Phys.,46(5B), (2007) pp. 3214 -3217.
  15. N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y. Akasaka, S. Inumiya, R. Hasunuma, K. Yamabe, H. Momida, T. Ohno, K. Ohmori, T. Chikyow, Y. Nara and K. Yamada, “Guiding Principle of Energy Level Controllability of Silicon Dangling Bonds in HfSiON,”  Jpn. J. Appl. Phys., 46(4B),( 2007) pp. 1891 - 1894.
  16. A. Uedono, S. Inumiya, T. Matsuki, T. Aoyama, Y. Nara, S. Ishibashi, T. Ohdaira, R. Suzuki, S. Miyazaki and K. Yamada, “Vacancy-fluorine complexes and their impact on the properties of metal-oxide transistors with high-k gate dielectrics studied using monoenergetic positron beams,” J. Appl. Phys., 102, (2007) pp. 054511-1 - 054511-7.
  17. N. Umezawa, K. Shiraishi, S. Miyazaki, A. Uedono, Y. Akasaka, S. Inumiya, A. Oshiyama, R. Hasunuma, K. Yamabe, H. Momida, T. Ohno, K. Ohmori, T. Chikyow, Y. Nara and K. Yamada, Role of the Ionicity in Defect Formation in Hf-based Dielectrics, ECS Trans., 11( 4), (2007) pp. 199-211.
  18. M. Sato, K. Yamabe, K. Shiraishi, S. Miyazaki, K. Yamada, C. Tamura, R. Hasunuma, S. Inumiya, T. Aoyama, Y. Nara and Y. Ohji , “Microscopic Understanding of PBTI and NBTI Mechanisms in High-k / Metal Gate Stacks ,” ECS Trans., 11( 4), (2007) pp. 615-627.  
  19. A. Uedono, R. Hasumuma, K. Shiraishi, K. Yamabe, S. Inumiya, Y. Akasaka, S. Kamiyama, T. Matsuki, T. Aoyama, Y. Nara, S. Miyazaki, H. Watanab, N. Umezawa, T. Chikyow, S. Ishibashi, T. Ohdaira, R. Suzuki and K. Yamada, “Vacancy-Type Defects in MOSFETs with High-k Gate Dielectrics Probed by Monoenergetic Positron Beams,” ECS Trans., 11(4), (2007) pp. 81-90.
  20. R. Hasumuma, T. Naito, C. Tamura, A. Uedono, K. Shiraishi, N. Umezawa, T. Chikyow, S. Inumiya, M. Sato, Y. Tamura, H. Watanabe, Y. Nara, Y. Ohji, S. Miyazaki, K. Yamada and K. Yamabe, “Tight distribution of dielectric characteristics of HfSiON in metal gate devices,” ECS Trans., 11(4), (2007) pp. 3-11. 

2006年度

  1. K. Makihara, J. Xu, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki / Thin Solid Films, Vol.508, No.1-2 (2006) pp. 186-189. / Characterization of electronic charged states of P-doped Si quantum dots using AFM/Kelvin probe
  2. J. Nishitani, K. Makihara, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki / Thin Solid Films, Vol.508, No.1-2 (2006) pp. 190-194. / Decay characteristics of electronic charged states of Si quantum dots as evaluated by an AFM/Kelvin probe technique
  3. K. Makihara, M. Ikeda, T. Nagai, H. Murakami, S. Higashi and S. Miyazaki / Transactions of Materials Research Society of Japan, Vol.31, No.1 (2006) pp. 133-136. / Fabrication of Multiply-Stacked Si Quantum Dots for Floating Gate MOS Devices
  4. T. Sakata, K. Makihara, S. Higashi and S. Miyazaki / Thin Solid Films, Vol.515, No.12 (2006) pp.4971-4974. / Growth of Crystallized Ge Films from VHF-Inductively Coupled Plasma of H2-Diluted GeH4
  5. S. Miyazaki, M. Ikeda and K. Makihara / Electrochemical Society Transaction, Vol.2, No.1 (2006) p.157-164. / Characterization of Electronic Charged States of Si-Based Quantum Dots and Their Application to Floating Gate Memories
  6. K. Makihara, M. Ikeda, S. Higashi and S. Miyazaki / Electrochemical Society Transaction, Vol.3, No.7 (2006) pp. 257-262. / Study of Charged states of Si Quantum Dots with Ge Core
  7. T. Nakayama, K. Shiraishi, S. Miyazaki, Y. Akasaka, K. Torii, P. Ahmet, K. Ohmori, N. Umezawa, H. Watanabe, T. Chikyow, Y. Nara, A. Ohta, H. Iwai, K. Yamada and T. Nakaoka / Electrochemical Society Transaction, Vol. 3 No. 3 (2006) pp. 129-140. / Physics of Metal/High-k Interfaces
  8. S. Miyazaki, A. Ohta, S. Inumiya, Y. Nara and K. Yamada / Electrochemical Society Transaction Vol. 3 No. 3 (2006) pp. 171-180. / Depth Profiling of Chemical and Electronic Structures and Defects of Ultrathin HfSiON on Si(100)
  9. Y. Munetaka, F. Takeno, A. Ohta, H. Murakami, S. Higashi, S. Miyazaki / Transactions of the Materials Research Society of Japan , Vol. 31, No. 1 (2006) pp. 145-148. / Characterization of FUSI-PtSi Formed on Ultrathin HfO2/Si(100) by Photoelectron Spectroscopy
  10. M. Taira, A. Ohta, H. Nakagawa, S. Miyazaki, K. Yoneda, M. Horikawa and K. Koyama / Transactions of the Materials Research Society of Japan , Vol. 31, No. 1 (2006) pp. 149-152. / Influence of thermal annealing on defect states and chemical structures in ultrathin Al2O3/SiN/poly-Si
  11. H. Nakagawa, A. Ohta, M. Taira, H. Abe,H. Murakami, S. Higashi, S. Miyazaki / Transactions of the Materials Research Society of Japan ,Vol. 31 No. 1 (2006) pp. 153-156. / Nitridation of Ge(100) Surfaces by Vacuum-ultra violet (VUV) Irradiation in NH3 Ambience
  12. H. Abe, H. Nakagawa, M. Taira, A. Ohta, S. Higashi and S. Miyazaki / Transactions of the Materials Research Society of Japan , Vol. 31, No. 1 (2006) pp. 157-160. / Impact of Nitrogen Incorporation into Yittrium Oxide on Chemical Bonding Features and Electrical Properties
  13. A. Ohta, H. Murakami, S. Higashi and S. Miyazaki / Journal of Surface Science and Nanotechnology , Vol. 4 (2006) pp. 174-179. / Photoemission Study of Ultrathin GeO2/Ge Heterostructures Formed by UV-O3 Oxidatione-
  14. A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, S. Miyazaki, S. Inumiya and Y. Nara / Transactions of the Materials Research Society of Japan, Vol. 31 No. 1 (2006) pp. 125-128. / Photoemission Study of Ultrathin HfSiON/Si(100) Systems
  15. T. Nagai, M. Ikeda, Y. Shimizu, S. Higashi and S. Miyazaki / Trans. of the Mat. Res. Soc. of Japan , Vol. 31, No. 1 (2006) pp. 137-140. / Multistep Electron Charging to and Discharging from Silicon-Quantum-Dots Floating Gate in nMOSFETs
  16. N. Umezawa, K. Shiraishi, Y. Akasaka, S. Inumiya, A. Uedono, S. Miyazaki, T. Chikyow, T.Ohno, Y. Nara and K. Yamada / Transactions of the Materials Research Society of Japan, Vol. 31, No. 1 (2006) pp. 129-132. / An Unfavorable Effect of Nitrogen Incorporation on Reduction in the Oxygen Vacancy Formation Energy
  17. N. Kosku and S. Miyazaki / J. Non-Cryst. Solid, Vol. 352 (2006) pp. 911-914. / The Application of very High Frequency Inductively-coupled Plasma to High-Rate Growth of Microcrystalline Silicon Films
  18. N. Kosku and S. Miyazaki / Thin Solid Films, Vol. 511-512 (2006) pp. 265-270. / High-rate Growth of Highly-crystallized Si Films from VHF Inductively-Coupled Plasma CVD
  19. A. Yamashita, Y. Okamoto, S. Higashi, S. Miyazaki, H. Watakabe and T. Sameshima / Thin Solid Films, Vol. 508 (2006) pp. 53-56. / In-Situ Observation of Rapid Crystalline Growth Induced by Excimer Laser Irradiation to Ge/Si Stacked Structure
  20. K. Sakaike, S. Higashi, H. Kaku, H. Murakami and S. Miyazaki / Japanese Journal of Applied Physics, Vol. 46, No. 3B (2007) pp. 1276-1279. / Melting and Solidification of Microcrystalline Si Films Induced by Semiconductor Diode Laser Irradiation
  21. T. Okada, S. Higashi, H. Kaku, N. Koba, H. Murakami and S. Miyazaki / Jpn. J. Appl. Phys., Vol. 45 No. 5B (2006) pp. 4355-4357. / Analysis of Transient Temperature Profile During Thermal Plasma Jet Annealing of Si Films on Quartz Substrate
  22. S. Higashi, H. Kaku, T. Okada, H. Murakami and S. Miyazaki / Jpn. J. Appl. Phys., Vol. 45 No. 5B (2006) pp. 4313-4320. / Crystallization of Si in Millisecond Time Domain Induced by Thermal Plasma Jet Irradiation

2005年度

  1. K. Makihara, H. Deki, H. Murakami, S. Higasi and S. Miyazaki / Applied Surface Science, Vol.244, No.1-4 (2005) pp. 75-78. / Control of the Nucleation Density of Si Quantum Dots by Remote Hydrogen Plasma Treatment
  2. Y. Okamoto, K. Makihara, H. Murakami, S. Higasi and S. Miyazaki / Applied Surface Science, Vol.244, No.1-4 (2005) pp. 12-15./ Formation of Microcrystalline Germanium (mc-Ge:H) Films From Inductively-Coupled Plasma CVD
  3. K. Makihara, Y. Okamoto, H. Murakami, S. Higashi and S. Miyazaki / Institute of Electronics, Information and Communication Engineers Trans. on Electronics, Vol. E88-C No. 4 (2005) pp. 705-708. / Characterization of Germanium Nanocrystallites Grown on SiO2 by a Conductive AFM Probe Technique
  4. S. Nagamachi, A. Ohta, F. Takeno, H. Nakagawa, H. Murakami, S. Miyazaki, T. Kawahara and K. Torii / Transactions of the Materials Research Society of Japan, Vol. 30 No. 1 (2005) pp. 197-200. / Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors
  5. F. Takeno, A. Ohta, S. Miyazaki, K. Komeda, M. Horikawa and K. Koyama / Transactions of the Materials Research Society of Japan, Vol. 30 No. 1 (2005) pp. 213-217. / Impact of Rapid Thermal Anneal on ALCVD-Al2O3/Si3N4/Si(100) Stack Structures-Photoelectron Spectroscopy
  6. H. Kaku, S. Higashi, H. Taniguchi, H. Murakami and S. Miyazaki / Appl. Surf. Sci., Vol. 244, No. 1-4 (2005) pp. 8-11. / A new crystallization technique of Si films on glass substrate using thermal plasma jet
  7. N. Kosku, H. Murakami, S. Higashi and S. Miyazaki / Appl. Surf. Sci., Vol. 244, No. 1-4 (2005) pp. 39-42. / Influence of substrate dc bias on crystallinity of silicon films grown at a high rate from inductively-coupled plasma CVD
  8. H. Murakami, Y. Moriwaki, M. Fujitake, D. Azuma, S. Higashi and S. Miyazaki / IEICE Trans. on Electronics, Vol. E88-C, No. 4 (2005) pp. 646-650. / Characterization of Atom Diffusion in Polycrystalline Si/SiGe/Si Stacked Gate
  9. H. Murakami, W. Mizubayashi, H. Yokoi, A. Suyama and S. Miyazaki / IEICE Trans. on Electronics, Vol. E88-C, No. 4 (2005) pp. 640-645. / Electrical Characterization of Aluminum-Oxynitride Stacked Gate Dielectrics Prepared by a Layer-by-Layer Process of Chemical Vapor Deposition and Rapid Thermal Nitridation
  10. T. Shibaguchi, M. Ikeda, H. Murakami and S. Miyazaki / IEICE Trans. on Electronics, Vol. E88-C, No. 4 (2005) pp. 709-712. / Charging and Discharging Characteristics of Stacked Floating Gates of Silicon Quantum Dots
  11. Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara, K. Torii and Y. Nara / in Physics and Chemistry of SiO2 and the Si-SiO2 Interface-5 ECS Trans., Vol. 1, No. 1 (2005) pp. 163-172. / Characterization of Charge Trapping and Dielectric Breakdown of HfAlOX/SiON Dielectric Gate Stack
  12. S. Higashi, H. Kaku, H. Murakami, S. Miyazaki, H. Watakabe, N. Ando and T. Sameshima / Jpn. J. of Appl. Phys., Vol. 44, No. 3 (2005) pp. L108-L110. / Application of Plasma Jet Crystallization Technique to Fabrication of Thin-Film Transistor
  13. S. Miyazaki, T. Shibaguchi and M. Ikeda / Mat. Res. Soc. Symp. Proc., Vol. 830 (2005) pp. 249-254. / Characterization of Electronic Charged States of Silicon Nanocrystals as a Floating Gate in MOS Structures
  14. F. Takeno, A. Ohta, S. Miyazaki, K. Komeda, M. Horikawa and K. Koyama / Trans. of the Mat. Res. Soc. of Japan , Vol. 30, No. 1 (2005) pp. 213-217. / Impact of Rapid Thermal Anneal on ALCVD-Al2O3/Si3N4/Si(100) Stack Structures-Photoelectron Spectroscopy
  15. H. Kaku, S. Higashi, S. Miyazaki, M. Asami, H. Watakabe, N. Andoh and T. Sameshima / Trans. of the Mat. Res. Soc. of Japan , Vol. 30, No. 1 (2005) pp. 283-286. / Fabrication of Polycrystalline Si Thin Film Transistor Using Plasma Jet Crystalliztion Technique
  16. K. Torii, K. Shiraishi, S. Miyazaki, K. Yamabe, M. Boero, T. Chikyow, K. Yamada, H. Kitajima and T. Arikado / Trans. of the Mat. Res. Soc. of Japan , Vol. 30, No. 1 (2005) pp. 191-195. / The Role of Oxygen-related Defects on the Reliabilities of HfO2-based High-k Gate Insulators
  17. N. Kosku and S. Miyazaki / Trans. of the Mat. Res. Soc. of Japan , Vol. 30, No. 1 (2005) pp. 279-282. / High-Rate Growth of Highly-Crystallized Si Films from VHF Inductively-Coupled Plasma CVD
  18. S. Nagamachi, A. Ohta, F. Takeno, H. Nakagawa, H. Murakami, S. Miyazaki, T. Kawahara and K. Torii / Trans. of the Mat. Res. Soc. of Japan , Vol. 30, No. 1 (2005) pp. 197-200. / Analysis of Leakage Current through Al/HfAlOx/SiONx/Si(100) MOS Capacitors
  19. Y. Pei, S. Nagamachi, H. Murakami, S. Higashi, S. Miyazaki, T. Kawahara and K. Torii / Trans. of the Mat. Res. Soc. of Japan , Vol. 30, No. 1 (2005) pp. 205-208. / Electrical Characterization of HfAlOx/SiON Dielectric Gate Capacitors
  20. S. Higashi, H. Kaku, H. Taniguchi, H. Murakami and S. Miyazaki, "Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet", Thin Solid Films, Vol. 487(2005)pp. 122-125.
  21. T. Sameshima, H. Watakabe, N. Andoh and S. Higashi, “Pulsed Laser Crystallization of Very Thin Silicon Films,” Thin Solid films, 487 (2005)  pp. 63-66.
  22. 宮崎 誠一 / 月刊マテリアルステージ, Vol. 5, No. 3 (2005) pp. 18-24. / 自己組織化シリコン系量子ドットを用いた次世代・機能メモリ開発
  23. 宮崎 誠一 / 第34回薄膜・表面物理基礎講座(JSAP No.AP052348), (2005) pp. 25-34. / ゲート絶縁膜およびMOS界面の化学構造および電子状態分析
  24. 宮崎 誠一 / 表面技術, Vol. 56, No. 12, 2005 / シリコン系量子ドットのフローティングゲートMOSデバイス応用

2004年度

  1. K. Makihara, Y. Okamoto, H. Nakagawa, M. Ikeda, H. Murakami, S. Higashi and S. Miyazaki / Thin Solid Films, Vol.457 (2004) pp. 103-108. / Electrical Characterization of Ge Microcrystallites by Atomic Force Microscopy Using a Conducting Probe
  2. H. Nakagawa, A. Ohta, F. Takeno, S. Nagamachi, H. Murakami, S. Higashi and S. Miyazaki / Japanese Journal of Applied Physics. Vol. 43 No. 11B (2004) pp. 7890-7894. / Characterization of Interfacial Oxide Layers in Heterostructures of Hafnium Oxides Formed on NH3-nitrided Si(100)
  3. A. Ohta, M. Yamaoka and S. Miyazaki / Microelectronic Engineering Vol.72 (2004) pp. 154-159. / Photoelectron Spectroscopy of ultrathin yttrium oxide films on Si(100)
  4. A. Ohta, H. Nakagawa, H. Murakami, S. Higashi, T, Kawahara, K. Torii and S. Miyazaki / Japanese Journal of Applied Physics, Vol. 43 No. 11B (2004) pp. 7831-7836. / Impact of Rapid Thermal O2 Anneal on Dielectric Stack Structures of Hafnium Aluminate and Silicon Dioxide Formed on Si(100)
  5. A. Sakai, S. Sakashita, M. Sakashita, S. Zaima and S. Miyazaki / Appl. Phys. Lett. , Vol. 85, No. 22 (2004) pp. 5322-5324. / Praseodymium silicate formed by postdeposition high-temperature aneeling
  6. Y. Darma, Hideki Murakami and S. Miyazaki / Appl. Surf. Sci., Vol. 224 (2004) pp. 156-159. / Influence of Thermal Annealing on Compositional Mixing and Crystallinity of Highly-Selective Grown Si Dots with Ge Core
  7. W. Mizubayashi, Y. Yoshida, H. Murakami, S. Miyazaki and M. Hirose / IEEE Electron Device Lett. , Vol. 25, No. 5 (2004) pp. 305-307. / Statistical Analysis of Soft and Hard Breakdown in 1.9-4.8nm-thick Gate Oxides
  8. A. Teshima and S. Miyazaki / Jpn. J. Appl. Phys., Vol. 43, No. 8A (2004) pp. 5129-5133. / New Analytical Modeling for Photoinduced Discharge Characteristics of Photoreceptors
  9. W. Mizubayashi and S. Miyazaki / Jpn. J. Appl. Phys., Vol. 43, No. 10 (2004) pp. 6925-6929. / Analysis of Soft Breakdown of 2.6-4.9nm-Thick Gate Oxides
  10. S. Higashi, H. Kaku, H. Taniguchi, H. Murakami and S. Miyazaki / Thin Solid Films, Vol. 487 (2005) pp. 122-125. / Crystallization of Si Films on Glass Substrate Using Thermal Plasma Jet
  11. 宮崎 誠一 / 新訂版 表面科学の基礎と応用 (エヌ・ティー・エス, 第3編 第1章 第2節-1), (2004) pp. 879-889. / 半導体界面極薄Si酸化膜およSi/SiO2界面の分析

2003年度

  1. M. Yamaoka, H. Murakami and S. Miyazaki / Appl. Surf. Sci. , Vol. 216/1-4 (2003) pp. 223-227. / Diffusion and Incorporation of Zr into Thermally-Grown SiO2 on Si(100)
  2. S. Miyazaki, M. Narasaki A. Suyama M. Yamaoka and H. Murakami / Appl. Surf. Sci. , Vol. 216/1-4 (2003) pp. 252-257. / Electronic Structure and Energy Band Offsets for Ultrathin Silicon Nitride on Si(100)
  3. M. Ikeda, Y. Shimizu, H. Murakami and S. Miyazaki / Jpn. J. Appl. Phys., Vol. 42, No. 6B (2003) pp. 4134-4137. / Multiple-Step Electron Charging in Silicon-Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Memories
  4. Y. Darma, H. Murakami and S. Miyazaki / Jpn. J. Appl. Phys., Vol. 42, No. 6B (2003) pp. 4129-4133. / Formation of Nanometer Silicon Dots with Germanium Core by Highly-Slective Low-Pressure Chemical Vapor Deposition
  5. S. Miyazaki, H. Yamashita, H. Nakagawa and M. Yamaoka / Mat. Res. Soc. Symp. Proc., Vol. 747 (2003) pp. 281-286. / Photoemission Study of Interfacial Oxidation in ZrO2/Sub-Nanometer SiONx/Si(100) Stacked
  6. Y. Darma, R. Takaoka, H. Murakami and S. Miyazaki / Nanotechnology , Vol. 14 (2003) pp. 413-415. / Self-assembling formation of silicon quantum dots with a germanium core by low-pressure chemical vapor deposition
  7. N. Kosku, F. Kurisu, M. Takegoshi, H. Takahashi and S. Miyazaki / Thin Solid Films , Vol. 435 (2003) pp. 39-43. / High-rate deposition highly crystallized silicon films from inductively coupled plasma
  8. 広瀬 全孝, 宮崎 誠一 / 人工格子の基礎 (シーエムシー出版, 第3章, 2003)pp. 143-155. / アモルファス半導体人工格子
  9. 宮崎 誠一 / 薄膜工学 (丸善株式会社, 2.3, 2003)pp. 95-118. / 化学気相成長法
  10. 宮崎 誠一 / 21世紀版 薄膜作製応用ハンドブック (エヌ・ティー・エス, 第2章第3節, 2003) pp. 384-393. / プラズマCVD法

2002年度

  1. T. Kikkawa, N. Fujiwara, H. Yamada and S. Miyazaki / Appl. Phys. Lett. , Vol. 81, No. 15 (2002) pp. 2821-2823. / Energy band structure of Ru/(Ba,Sr)TiO3/Si capacitor deposited by inductively-coupled plasma-assisted radio-freqency-magnetron plasma
  2. S. Miyazaki / Appl. Surf. Sci., Vol. 190/1-4 (2002) pp. 66-74. / Characterization of High-k Gate Dielectric/Silicon Interfaces
  3. A. Teshima and S. Miyazaki / Jpn. J. Appl. Phys., Vol. 41, No. 11B (2002) pp. L1294-L1296. / Improved Perfomance of Amorphous Silicon Photoreceptor by Using a Thick Surface Layer with a Graded-Band-Gap Structure
  4. H. Murakami, T. Mihara, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 41, No. 5A (2002) pp. L512-L514. / Carrier Depletion Effect in the n+Poly-Si Gate Side-Wall/SiO2 Interfaces as Evaluated by Gate Tunnel Leakage Current
  5. W. Mizubayashi, Y. Yoshida, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 41, No. 4B (2002) pp. 2426-2430. / Quantitative Analysis of Oxide Voltage and Field Dependence of Time-Dependent Dielectric Soft Breakdown and Hard Breakdown in Ultrathin Gate Oxides
  6. S. Miyazaki, M. Narasaki, M. Ogasawara and M. Hirose / Solid State Electronics , Vol. 16 (2002) pp. 1679-1685. / Chemical and Electronic Structure of Ultrathin Zirconium Oxide Films on Silicon as Determined by Photoelectron Spectroscopy
  7. 宮崎 誠一 / マテリアル インテグレーション, Vol. 5, No. 15(2002)pp. 53-60. / シリコン量子ドットの自己組織化形成とメモリデバイス応用
  8. 香野 淳, 池田 弥央, 村上 秀樹, 宮崎 誠一, 廣瀬全孝 / 応用物理, Vol. 71, No. 7 (2002) pp. 864-868. / シリコン量子ドットを用いたメモリーデバイスの開発

2001年度

  1. Y. Hirano, F. Sato, N. Saito, M. Abe, S. Miyazaki and M. Hirose / Appl. Phys. Lett. , Vol. 79, No. 14(2001)pp. 2255-2257. / Photoconductive Properties of Nanometer-Sized Si Dot Multilayers
  2. M. Koh, W. Mizubayashi, K. Iwamoto, H. Murakami, T. Ono, M. Tsuno, T. Mihara, K. Shibahara, S. Miyazaki and M. Hirose / IEEE Trans. on Electron Devices, Vol. 48, No. 2(2001)pp. 259-264. / Limit of Gate Oxide Thickness Scaling in MOSFETs due to Apparent Threshold Voltage Fluctuation Induced by Tunnel Leakage Current
  3. S. Miyazaki / J. Vac. Sci. Technol., Vol. B19, No. 6(2001)pp. 2212-2216. / Photoemission Study of Energy Band Alignments and Gap State Density Distributions for High-k Gate Dielectrics
  4. A. Kohno, H. Murakami, M. Ikeda, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 40, No. 7B(2001)pp. L721-L723. / Memory Operation of Silicon Quantum-Dot Floating Gate Metal-Oxide-Semiconductor Field-Effect Transistors
  5. S. Miyazaki, M. Narasaki, M. Ogasawara and M. Hirose / Microelec. Eng., Vol. 59(1-4)(2001)pp. 373-378. / Characterization of Ultrathin Zirconium Oxide Films on Silicon Using Photoelectron Spectroscopy
  6. N. Sakikawa, Y. Shishida, S. Miyazaki and M. Hirose / Solar Energy Materials and Solar Cells, Vol. 66(2001)pp. 337-343. / High-Rate Deposition of Hydrogenated Amorphous Silicon Films Using Inductively-Coupled Silane Plasma
  7. S. Miyazaki, K. Morino and M. Hirose / Solid State Phenomena, Vol. 76-77(2001)pp. 149-152. / Influence of Boron and Fluorine Incorporation on the Network Structure of Ultrathin SiO2
  8. S. Miyazaki, M. Ikeda, E. Yoshida, N. Shimizu and M. Hirose / Springer Proc. in Phys. 87: Proc. of 25th Int. Conf. on the Physics of Semiconductor, Vol. 19(6)(2001)pp. 373-374. / Nucleation Site Control in Self-Assembling of Si Quantum Dots on Ultrathin SiO2/c-Si

2000年度

  1. Khairurrijial, W. Mizubayashi, S. Miyazaki and M. Hirose / Appl. Phys. Lett. , Vol. 77, No. 22(2000)pp. 3580-3582. / Unified Analytic Model of Direct and Fowler-Nordheim Tunnel Currents through Ultrathin Gate Oxides
  2. S. Miyazaki, T. Tamura, M. Ogasawara, H. Itokawa, H. Murakami and M. Hirose / Appl. Surf. Sci., Vol. 159-160(2000)pp. 75-82. / Influence of Nitrogen Incorporation in Ultrathin SiO2 on the Structure and Electronic States of the SiO2/Si(100) Interface
  3. Khairurrijial, W. Mizubayashi, S. Miyazaki and M. Hirose / J. Appl. Phys. , Vol. 87(2000)pp. 3000-3005. / Analytic Model of Direct Tunnel Current through Ultrathin Gate Oxides
  4. H. Nakata, K. Murayama, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 266-269(2000)pp. 1067-1071. / Luminescence and Absorption Edge of a-Ge:H Well Layers in a-Si:H/a-Ge:H Multilayers
  5. K. Murayama, N. Katagiri, K. Ouno, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 266-269(2000)pp. 1072-1076. / Thermalization Gaps of a-Si:H Well Layers in a-Si:H/a-Si3N4:H Multilayers
  6. S. Miyazaki, N. Fukuhara and M. Hirose / J. Non-Cryst. Solids, Vol. 266-269(2000)pp. 59-63. / Surface-Sensitive Raman Scattering Study on a-Si:H Network Formation Process During Deposition and H2 Plasma Annealing
  7. Y. Hirano, F. Sato, N. Saito, M. Abe, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 266-269(2000)pp. 1004-1008. / Fabrication of Nanometer Sized Si dot Multilayers and Their Photoluminescence Properties
  8. Y. Okazaki, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 266-269(2000)pp. 54-58. / Infrared Attenuated-Total-Reflection Spectroscopy of Microcrystalline Silicon Growth
  9. K. Murayama, M. Yamamuro and H. Nakata, S. Miyazaki and M. Hirose / J. Porous Materials, Vol. 7(2000)pp. 257-261. / Excitation Energy Evolution of Red-Luminescence Band in Porous Si
  10. N. Shimizu, M. Ikeda, E. Yoshida, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 39(2000)pp. 2318-2320. / Charging States of Si Quantum Dots as Detected by AFM/Kelvin Probe Technique
  11. M. Hirose, M. Koh, W. Mizubayashi, H. Murakami, K. Shibahara and S. Miyazaki / Semicond. Sci. Technol., Vol. 15(2000)pp. 485-490. / Fundamental Limit of Gate Oxide Thickness Scaling in Advanced MOSFETs
  12. M. Hirose, W. Mizubayashi, Khairurrijal, M. Ikeda, H. Murakami, A. Kohno, K. Shibahara, S. Miyazaki / Superlattices and Microstructures, Vol. 27, No. 5.- 6(2000)pp. 383-393. / Ultrathin Gate Dielectrics for Silicon Nanodevices
  13. W. Mizubayashi, H. Itokawa, S. Miyazaki and M. Hirose / The Physics and Chemistry of SiO2 and the Si-SiO2 Interfaces - 4: The Electrochem. Soc., Vol. PV 2000-1(2000)pp. 409-417. / Soft Breakdown Mechanism in Ultrathin Gate Oxides
  14. S. Miyazaki, Y. Hamamoto, E. Yoshida, M. Ikeda and M. Hirose / Thin Solid Films, Vol. 369(2000)pp. 55-59. / Control of Self-Assembling Formation of Nanometer Silicon Dots by Low Pressure Chemical Vapor Deposition
  15. 宮崎 誠一 / 応用物理, Vol. 69, No. 6(2000)pp. 689-694. / CVDの物理
  16. 宮崎 誠一 / 次世代ULSIプロセス技術、 廣瀬全孝他編 (リアライズ社, 12.1, 12.2.3, 12.4.1, 2000)pp. 571, 602, 637-585, 607, 642. / 表面・界面分析、XPS・ATRによる酸化膜中不純物の化学状態、FT-IR-ATRによるCVD,エッチング反応計測

1999年度

  1. Y. Sasaki, J. Maeda, T. Koishi, K. Hashimoto, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose / J. Electrochem. Soc., Vol. 146, No. 2(1999)pp. 710-712. / High-Speed GaAs Epitaxial Lift-Off and Bonding with High Alignment Accuracy Using Sapphire Plate
  2. Khairurrijial, S. Miyazaki and M. Hirose / J. Vac. Sci. Technol., Vol. B17, No. 2(1999)pp. 306-310. / Electron Field Emission from a Silicon Subsurface Based on a Generalized Airy Function Approach
  3. Khairurrijial, S. Miyazaki, S. Takagi and M. Hirose / Jpn. J. Appl. Phys., Vol. 38, No. 1A/B(1999)pp. L30-L32. / Analytical Modeling of Metal Oxide Semiconductor Inversion-Layer Capacitance
  4. Khairurrijial, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 38, No. 3A(1999)pp. 1352-1355. / Calculation of Subband States in a Metal-Oxide-Semiconductor Inversion Layer with a Realistic Potential Profile
  5. N. Sakikawa, M. Tamao, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 38, No. 10(1999)pp. 5768-5771. / Structural Inhomogeneity on Hydrogenated Amorphous Silicon Related to the Photoelectric Properties and Defect Density
  6. S. Miyazaki, K. Shiba, N. Miyoshi, K. Etoh, A. Kohno and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 536(1999)pp. 45-50. / Luminescence Study of Self-Assembled, Silicon Quantum Dots
  7. S. Miyazaki, T. Maruyama, A. Kohno and M. Hirose / Mat. Sci. in Semiconductor Processing, Vol. 2(1999)pp. 185-190. / Electronic Defect States at Ultrathin SiO2/Si Interfaces from Photoelectron Yield Spectroscopy
  8. S. Miyazaki, T. Maruyama, A. Kohno and M. Hirose / Microelec. Eng., Vol. 48(1999)pp. 63-66. / Photoelectron Yield Spectroscopy of Electronic States at Ultrathin SiO2/Si Interfaces
  9. K. Murayama, N. Katagiri, S. Miyazaki and M. Hirose / Solid State Commun., Vol. 111(1999)pp. 693-697. / Thermalization Gaps of the Ultra-Thin a-Si:H Well Layers in a-Si:H/a-Si3N4:H Multilayers

1998年度

  1. S. A. Ding, M. Ikeda, M. Fukuda, S. Miyazaki and M. Hirose / Appl. Phys. Lett. , Vol. 73, No. 26(1998)pp. 3881-8883. / Quantum Confinement Effect in Self-Assembled, Nanometer Silicon Dots
  2. K. Nakagawa, Y. Yoshida, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 227-230(1998)pp. 48-52. / Insights into Surface Reactions During a-SiGe:H Deposition and Hydrogen Plasma Annealing as Obtained from Infrared Attenuated Total Reflection Spectroscopy
  3. H. Deki, K. Nakagawa, A. Kohno, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 37, No. 2(1998)pp. 435-439. / Gap-State Distributions in Hydrogenated Amorphous Silicon-Germanium Evaluated Using Capacitance-Voltage Method
  4. K. Shiba, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 37, No. 4A(1998)pp. 1684-1688. / Luminescence Study of Thermally-Oxidized Porous Si under Subgap or Overgap Excitation
  5. M. Fukuda, W. Mizubayashi, A. Kohno, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 37, No. 12B(1998)pp. L1534-L1536. / Analysis of Tunnel Current through Ultrathin Gate Oxides
  6. N. Sakikawa, M. Tamao, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 37, No. 2(1998)pp. 432-434. / Correlation Between Light-Induced Degradation and Structural Inhomogeneities in Hydrogenated Amorphous Silicon Prepared Under High-Rate Deposition Conditions
  7. N. Sakikawa, Y. Shishida, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 37, No. 7A(1998)pp. L774-L777. / Deposition of Hydrogenated Amorphous Silicon Under Intermittent Substrate Bias
  8. N. Sakikawa, Y. Shishida, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 37, No. 4A(1998)pp. L409-L412. / In Situ Monitoring of Silicon Surfaces During Reactive Ion Etching
  9. S. Miyazaki, T. Tamura, T. Maruyama, H. Murakami, A. Kohno and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 500(1998)pp. 81-86. / Evaluation of Gap States in Hydrogen-Terminated Silicon Surfaces and Ultrathin SiO2/Si Interfaces by Using Photoelectron Yield Spectroscopy
  10. M. Hirose, W. Mizubayashi, M. Fukuda and S. Miyazaki / Silicon Materials Sci. and Technol.: The Electrochem. Soc., Vol. PV 98-1(1998)pp. 730-744. / Tunneling Current and Wearout Phenomena in Sub-5nm Gate Oxides
  11. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose / Thin Solid Films, Vol. 335(1998)pp. 130-133. / Composition Dependence of Surface Morphology of Ultrathin a-SiGe:H Alloy Studying by Atomic Force Microscopy
  12. 宮崎 誠一 / ウェーハ表面完全性の創製・評価技術、 津屋英樹編 (サイエンスフォーラム, 第4章、第2節, 1998)pp. 152-159. / 洗浄法によるウェーハ表面の平坦化
  13. 宮崎 誠一, 廣瀬全孝 / 応用物理, Vol. 67, No. 7(1998)pp. 807-811. / シリコン量子ドットの自己組織化形成と発光特性

1997年度

  1. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose / Acta Physica Sinica, Vol. 6, No. 1(1997)pp. 52-56. / Structure and Photoelectric Properties of a-SiGe:H Alloy Produced by High Hydrogen Dilution Method
  2. M. Fukuda, K. Nakagawa, S. Miyazaki and M. Hirose / Appl. Phys. Lett. , Vol. 70, No. 17(1997)pp. 2291-2293. / Resonant Tunneling through a Self-Assembled Si Quantum Dot
  3. S. Miyazaki, J. Schaefer, J. Ristein and L. Ley / Appl. Surf. Sci, Vol. 117-118(1997)pp. 32-36. / Implication of Hydrogen-Induced Boron Passivation in Wet-Chemically Cleaned Si(111):H
  4. S. Miyazaki, H. Nishimura and M. Fukuda, L. Ley and J. Ristein / Appl. Surf. Sci., Vol. 113-114(1997)pp. 585-589. / Structure and Electronic States of Ultrathin SiO2 Thermally-Grown on Si(100) and Si(111) Surfaces
  5. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose / Chinese J. Semiconductor, Vol. 18, No. 3(1997)pp. 228-231. / Study on Structural Stability of Hydrogenated Amorphous Germanium-Nitrogen Alloys
  6. M. Hirose, W. Mizubayashi, K. Morino, M. Fukuda and S. Miyazaki / Fundamental Aspects of Ultrathin Dielectrics on Si-Based Devices, Kluwer Academic Pub, (1997)pp. 315-324. / Tunneling Transport and Reliability Evaluation in Extremely Thin Gate Oxides
  7. J. Schaefer, J. Ristein, S. Miyazaki and L. Ley / J. Vac. Sci. Technol., Vol. A15, No. 2(1997)pp. 408-414. / Interface Formation Between Hydrogen Terminated Si(111) and Amorphous Hydrogenated Carbon (a-C:H)
  8. J. Maeda, Y. Sasaki, K. Shibahara, S. Yokoyama, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 36, No. 3(1997)pp. 1554-1557. / High-Rate GaAs Epitaxial Lift-Off Technique for Optoelectronic Integrated Circuits
  9. K. Shiba, K. Nakagawa, M. Ikeda, A. Kohno, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 36, No. 10A(1997)pp. L1279-1282. / Optical Absorption and Photoluminescence of Self-Assembled Silicon Quantum Dots
  10. Khairurrijial, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 36, No. 11B(1997)pp. L1541-L1544. / Quasibound States of Electric Field-Induced Quantum Wells in Silicon Subsurfaces
  11. D. Imafuku, W. Mizubayashi, S. Miyazaki and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 477(1997)pp. 101-105. / Organic Contamination of Silicon Wafer in Clean Room Air and Its Impact to Gate Oxide Integrity
  12. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 446(1997)pp. 419-422. / Raman and FT-IR Study on Structure and Its Nitrogen Alloy
  13. K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 452(1997)pp. 243-248. / Self-Assembling Formation of Silicon Quantum Dots by Low Pressure Chemical Vapor Deposition
  14. T. Osada, Y. Kawazawa, S. Miyazaki and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 477(1997)pp. 197-202. / Influence of BHF Treatments on Hydrogen-Terminated Si(100) Surfaces
  15. K. Nakagawa, M. Fukuda, S. Miyazaki and M. Hirose / Opt. Soc. of America Tech. Digest Series, Vol. 2(1997)pp. 21-23. / Self-Assembling of Silicon Quantum Dot and Its Electronic Characterization
  16. S. Miyazaki, Y. Yoshida, Y. Miyoshi and M. Hirose / Solar Energy Materials and Solar Cells, Vol. 49(1997)pp. 45-51. / Atomic Scale Characterization of a-Si:H/a-SiC:H Interface Structures
  17. K. Murayama, T. Toyama, S. Miyazaki and M. Hirose / Solid State Commun., Vol. 104(1997)pp. 119-123. / Fundamental Absorption Edge Spectrum of Ultrathin a-Si:H Film in a-Si:H/a-Si3N4:H Multilayer Obtained from Luminescence Excitation Spectrum
  18. K. Murayama, N. Komatsu, S. Miyazaki and M. Hirose / Solid State Commun., Vol. 103(1997)pp. 155-160. / Minimum in the Bandgap and Luminescence Peak Energy of Red-Luminescent Si Nanoparticles in Porous Silicon
  19. S. Miyazaki, A. Mouraguchi and K. Shiba / Thin Solid Films, Vol. 297(1997)pp. 183-187. / Fabrication of Silicon Nanocrystallines by Oxidation/Annealing of Polysilane Films and Their Luminescence Properties

1996年度

  1. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose / Advanced Luminescent Materials, Vol. 95-25(1996)pp. 200-211. / Band Gap of Luminescent Porous Silicon
  2. S. Miyazaki, J. Schafer, J. Ristein and L. Ley / Appl. Phys. Lett, Vol. 68(1996)pp. 1247-1249. / Surface Fermi Level Position of Hydrogen Passivated Si(111) Surfaces
  3. C. F. O. Graeff, M. Stutzmann and S. Miyazaki / J. Appl. Phys, Vol. 79(1996)pp. 9166-9171. / Electrically Detected Magnetic Resonance in a-Si:H/a-Ge:H Multilayers
  4. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose / J. Appl. Phys, Vol. 80, No. 8(1996)pp. 4703-4706. / Preparation of Hydrogenated Amorphous Germanium Nitrogen Alloys by Plasma Enhanced Chemical Vapor Deposition
  5. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose / J. Luminescence, Vol. 66-67(1996)pp. 319-322. / Luminescence Excitation Assisted by Phonons in Porous Silicon
  6. J. Xu, K. Shiba, S. Miyazaki, M. Hirose, K. Chen and D. Feng / J. Non-Cryst. Solids, Vol. 198-200(1996)pp. 582-586. / Device-Grade a-SiGe:H Alloys Prepared by Nanometer Deposition/H2 Plasma Annealing Method
  7. J. Xu, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 208(1996)pp. 277-281. / High-Quality Hydrogenated Amorphous Silicon-Germanium Alloys for Narrow Bandgap Thin Film Solar Cells
  8. K. Murayama, T. Toyama, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 198-200(1996)pp. 792-795. / Excitation Spectrum of Luminescence in a-Si:H/a-Si3N4:H Multilayers
  9. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 198-200(1996)pp. 953-956. / Phonon-Assisted Luminescence Excitation in Porous Silicon
  10. K. Yamashita, H. Deki, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 198-200(1996)pp. 800-803. / Modulation Doping in a-Si:H/a-Ge:H Multilayer Structures
  11. M. Ohmura, H. Deki, K. Yamashita, S. Miyazaki / J. Non-Cryst. Solids, Vol. 198-200(1996)pp. 817-820. / Implication of Subband Broadening in the Quantum Well of a-Si:H/a-Ge:H Mulatilayers
  12. Y. Miyoshi, Y. Yoshida, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 198-200(1996)pp. 1029-1033. / Real Time Observation of Surface Reactions During a-Si:H Deposition or H2 Plasma Annealing by Using FT-IR-ATR
  13. L. Ley, J. Ristein, J. Schaefer and S. Miyazaki / J. Vac. Sci. Technol., Vol. B14(1996)pp. 3008-3012. / Near-Surface Dopant Passivation After Wet-Chemical Preparation of Si(111):H Surfaces
  14. J. Xu, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 34, No. 4A(1996)pp. 2043-2046. / Nitrogen Incorporation in a-Ge:H Produced in High-Hydrogen-Dilution Plasma
  15. K. Okamoto, S. Yamakawa, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 35, No. 4B(1996)pp. L519-L522. / Fine SiO2 Pattern Generation by Electron Beam Direct Writing onto Polysiloxene-Based Thin Films and Its Application to Etch Mask
  16. T. Doi, T. Numba, A. Uehara, M. Nagata, S. Miyazaki, K. Shibahara, S. Yokoyama, A. Iwata, T. Ae and M. Hirose / Jpn. J. Appl. Phys., Vol. 35, No. 2B(1996)pp. 1405-1409. / Optically Interconnected Kohonen Net for Pattern Recognition
  17. T. Namba, A. Uehara, T. Doi, T. Nagata, Y. Kuroda, S. Miyazaki, K. Shibahara, S. Yokoyama, A. Iwata and M. Hirose / Jpn. J. Appl. Phys., Vol. 35, No. 2B(1996)pp. 941-945. / High-Efficiency Micromirrors and Branched Optical Waveguides on Si Chips
  18. S. Miyazaki, A. Mouraguchi and M. Shinohara / Mat. Res. Soc. Symp. Proc., Vol. 417(1996)pp. 401-406. / Stable Visible Photoluminescence from Annealed Polysiloxene-Based Thin Films
  19. S. Yokoyama, K. Miyake, T. Nagata, H. Sakaue, S. Miyazaki, Y. Horiike, A. Iwata, T. Ae, M. Koyanagi and M. Hirose / Semiconductor Characterization: American Inst. of Phys. press, (1996)pp. 599-604. / GaAs/Si Optoelectronic Design and Development at Hiroshima University
  20. J. Xu, K. Chen, D. Feng, S. Miyazaki and M. Hirose / Solid State Commun., Vol. 99, No. 4(1996)pp. 269-272. / Effect of Hydrogen Plasma for Obtaining High-Quality a-SiGe:H Alloys
  21. M. Hirose, J. L. Alay, T. Yoshida and S. Miyazaki / The Physics and Chemistry of SiO2 and the Si-SiO2 Interface - 3: The Electrochem. Soc., Vol. PV 96-1(1996)pp. 485-496. / Electronic Density of States at the Ultrathin SiO2/Si Interfaces
  22. 宮崎 誠一, 廣瀬全孝 / クリーンテクノロジー, Vol. 16, No. 1(1996)pp. 21-25. / シリコン表面の状態-シリコン表面の平坦化とシリコン/酸化膜界面の構造

1995年度

  1. T. Teuschler, K. Mahr, S. Miyazaki, M. Hundhausen and L. Ley / Appl. Phys. Lett. , Vol. 67, No. 21(1995)pp. 3144-3146. / Nanometer-Scale Field-Induced Oxidation of Si(111):H by a Conducting Prove Scanning Force Microscope: Doping Dependence and Kinetics
  2. C. H. Bjorkman, T. Yamazaki, S. Miyazaki and M. Hirose / J. Appl. Phys, Vol. 77, No. 1(1995)pp. 313-317. / Analysis of Infrared Attenuated Total Reflection Spectra from Thin SiO2 Films on Si
  3. S. Yokoyama, T. Nagata, Y. Kuroda, T. Doi, T. Namba, K. Miyake, T. Miyamoto, S. Miyazaki, M. Koyanagi and M. Hirose / J. Vac. Sci. Technol., Vol. A13, No. 3(1995)pp. 629-635. / Optical Waveguides on Silicon Chips
  4. C. H. Bjorkman, M. Fukuda, T. Yamasaki, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 34, No. 2B(1995)pp. 722-726. / Atomic Scale Morphology of Hydrogen-Terminated Si(100) Surfaces Studied by Fourier-Transform Infrared Attenuated Total Reflection Spectroscopy and Scanning Probe Microscopies
  5. H. Deki, M. Fukuda, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 34, No. 8B(1995)pp. L1027-L1030. / Surface Morphologies of Hydrogenated Amorphous Silicon at the Early Stages of Plasma-Enhanced Chemical Vapor Deposition
  6. J. Xu, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 34, No. 2B(1995)pp. L203-L206. / High Quality a-SiGe:H Alloys Prepared by Nanometer Deposition/H2 Plasma Annealing Method
  7. K. Miyake, T. Namba, K. Hashimoto, H. Sakaue, S. Miyazaki, Y. Horiike, S. Yokoyama, M. Konagai and M. Hirose / Jpn. J. Appl. Phys., Vol. 34, No. 2B(1995)pp. 1246-1248. / Fabrication and Evaluation of Three-Dimensional Optically-Coupled Common Memory
  8. S. Miyazaki, H. Shin, Y. Miyoshi and M. Hirose / Jpn. J. Appl. Phys., Vol. 34, No. 2B(1995)pp. 787-790. / Real-Time Monitoring of Surface Reactions during Plasma-Enhanced CVD of Silicon
  9. T. Nagata, T. Namba, Y. Kuroda, K. Miyake, T. Miyamoto, S. Yokoyama, S. Miyazaki, M. Konagai and M. Hirose / Jpn. J. Appl. Phys., Vol. 34, No. 2B(1995)pp. 1282-1285. / Single-Chip Integration of Light-Emitting Diode, Waveguide and Micormirrors
  10. T. Yoshida, D. Imafuku, J. L. Alay, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 34, No. 2B(1995)pp. L903-L906. / Quantitative Analysis of Tunneling Current Through Ultrathin Gate Oxides
  11. K. Shiba, S. Miyazaki and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 358(1995)pp. 537-542. / Excitation Time Dependence of Luminescence Decay in Thermally Oxidized Porous Si
  12. S. Yokoyama, T. Nagata, T. Namba, Y. Kuroda, T. Doi, K. Miyake, S. Miyazaki and M. Hirose / Optoelectronic Interconnects III, Proc. SPIE, (1995)pp. 89-93. / Optical Interconnection on Silicon LSI Chips
  13. K. Murayama, S. Miyazaki and M. Hirose / Solid State Commun., Vol. 93(1995)pp. 841-846. / Excitation and Recombination Process in Porous Silicon
  14. K. Murayama, S. Miyazaki and M. Hirose / The Physics of Semiconductors: World Sci. Pub., (1995)pp. 2161-2164. / Excitation and Radiative Recombination Process in Porous Silicon
  15. T. Yamazaki, C. H. Bjorkman, S. Miyazaki and M. Hirose / The Physics of Semiconductors: World Sci. Pub., (1995)pp. 2653-2656. / Local Structure of Ultra-Thin (3-25nm) SiO2 Thermally Grown on Si(100) and (111) Surfaces
  16. S. Miyazaki, K. Sakamoto, K. Shiba and M. Hirose / Thin Solid Films, Vol. 255(1995)pp. 99-102. / Photoluminescence from Anodized and Thermally Oxidized Porous Germanium

1994年度

  1. K. Okamoto, M. Shinohara, T. Yamannishi, S. Miyazaki and M. Hirose / Appl. Surf. Sci. , Vol. 79-80(1994)pp. 57-61. / Laser-Induced Hydrogen Desorption from Polysilane and Its Application to Silicon Pattern Generation
  2. M. Hirose, K. Okamoto and S. Miyazaki / J. Photopoly. Sci. and Technol., Vol. 7, No. 3(1994)pp. 599-606. / Beam Induced Modification of Polysilane for Fine Pattern Generation
  3. M. Hirose, M. Hiroshima, T. Yasaka and S. Miyazaki / J. Vac. Sci. Technol., Vol. A12, No. 4(1994)pp. 1864-1868. / Characterization of Silicon Surface Microroughness and Tunneling Transport through Ultrathin Gate Oxides
  4. K. Murayama, H. Komatsu, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. Suppl. 34(1994)pp. 176-178. / Phonon Interaction in the Luminescence of Porous Silicon
  5. K. Murayama, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 33, No. 6A(1994)pp. 3310-3313. / Reabsorption of Visible Luminescence in Porous Si
  6. K. Okamoto, M. Shinohara, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 33, No. 4B(1994)pp. 2258-2261. / Fine SiO2 Pattern Generation by Excimer Laser-Induced Modification of Polysiloxene-Based Thin Films
  7. M. Hiroshima, T. Yasaka, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 33, No. 1B(1994)pp. 395-398. / Electron Tunneling Through Ultra-Thin Gate Oxide Formed on Hydrogen-Terminated Si(100) Surfaces
  8. T. Yamasaki, S. Miyazaki, C. H. Bjorkman, M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 318(1994)pp. 419-424. / Infrared Spectra of Ultra-Thin SiO2 Grown on Si Surface
  9. S. Miyazaki, K. Okamoto, Y. Miyoshi, H. Shin and M. Hirose / Optoelectronics-Devices and Technologies, Vol. 9, No. 3(1994)pp. 337-344. / Characterization of Polysilane-Based Films Produced from Silane or Disilane Plasma at Cryogenic Temperatures
  10. H. Deki, S. Miyazaki, M. Ohmura and M. Hirose / Solar Energy Materials and Solar Cells, Vol. 34(1994)pp. 431-437. / Narrow-Bandgap a-Ge:H/a-Si:H Multilayers for Amorphous Silicon-Based Solar Cells
  11. 廣瀬全孝, 宮崎 誠一 / 応用物理, Vol. 63, No. 11(1994)pp. 1118-1122. / 高流動性プラズマCVDによる薄膜形成
  12. 宮崎 誠一 / 電子デバイス活用辞典、 電子デバイス活用辞典編集委員会編 (工業調査会, , 1994). / 半導体および分析技術関連の用語解説

1993年度

  1. H. Deki, S. Miyazaki, M. Ohmura and M. Hirose / J. Non-Cryst. Solids, Vol. 164-166(1993)pp. 841-844. / Structural and Optical Properties of a-Si:H/a-Ge:H Multilayers
  2. H. Shin, M. Hashimoto, K. Okamoto, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 32, No. 6B(1993)pp. 3081-3084. / High-Fluidity Deposition of Si By Plasma Enhanced CVD of Si2H6 or Si4
  3. K. Shiba, K. Sakamoto, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 32, No. 6A(1993)pp. 2722-2724. / Photoluminescence from Thermally Oxidized Porous Silicon
  4. M. Hirose, T. Yasaka, M. Hiroshima, M. Takakura and S. Miyazaki / Mat. Res. Soc. Symp. Proc., Vol. 315(1993)pp. 367-374. / Structural and Electrical Characterization of Ultra-Thin SiO2 Grown on Hydrogen-Terminated Silicon Surfaces
  5. S. Miyazaki, K. Shiba, K. Sakamoto and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 283(1993)pp. 269-274. / Intense Visible Luminescence from Thermally Oxidized Porous Silicon
  6. S. Miyazaki, K. Sakamoto, K. Shiba and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 283(1993)pp. 299-304. / Metastability of Luminescent Porous Silicon
  7. M. Hirose, M. Hiroshima, T. Yasaka, M. Takakura and S. Miyazaki / Microelec. Eng., Vol. 22, No. 1(1993)pp. 3-10. / Ultra-Thin Gate Oxide Grown on Hydrogen-Terminated Silicon Surfaces
  8. M. Hirose, T. Takakura, T. Yasaka and S. Miyazaki / The Physics and Chemistry of SiO2 and the Si-SiO2 Interface 2: Plenum Press, New York, (1993)pp. 177-186. / Native Oxide Growth and Hydrogen Bonding Features on Chemically Cleaned Silicon Surfaces

1992年度

  1. T. Yasaka, S. Uenaga, H. Yasutake, M. Takakura, S. Miyazaki and M. Hirose / IEICE Trans. Electron. , Vol. E75-C, No. 7(1992)pp. 764-769. / Native Oxide Growth on Hydrogen-Terminated Silicon Surfaces
  2. H. Shin, K. Okamoto, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 31, No. 6B(1992)pp. 1953-1957. / Effect of Substrate Bias on Silicon Thin Film Growth in Plasma Enhanced CVD at Cryogenic Temperatures
  3. K. Murayama, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 31, No. 9B(1992)pp. L1358-L1361. / Visible Photoluminescence from Porous Silicon
  4. K. Okamoto, H. Shin, K. Shiba, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 31, No. 12B(1992)pp. 4441-4443. / Sub-Half-Micron Silicon Pattern Generation by Electron Beam Direct Writing on Polysilane Films
  5. K. Sawara, T. Yasaka, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 31, No. 7B(1992)pp. L1358-L1361. / Atomic Scale Flatness of Chemically Cleaned Silicon Surfaces Studied by Infrared ATR Spectroscopy
  6. M. Takakura, T. Yasaka, S. Miyazaki and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 259(1992)pp. 113-118. / Chemical Structure of Native Oxide Grown on Hydrogen-Terminated Silicon Surfaces
  7. S. Miyazaki, T. Yasaka, K. Okamoto, K. Shiba, K. Sakamoto and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 256(1992)pp. 185-188. / Structural Characterization of Porous Silicon Fabricated by Electrochemical and Chemical Dissolution of Si Wafers
  8. S. Miyazaki, H. Shin, K. Okamoto and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 242(1992)pp. 681-686. / Wide-Gap Polysilane Produced by Plasma-Enhanced CVD at Cryogenic Temperatures
  9. T. Yasaka, M. Takakura, K. Sawara, S. Uenaga, H. Yasutake, S. Miyazaki and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 259(1992)pp. 385-390. / Cleaning and Oxidation of Heavily Doped Si Surfaces
  10. S. Miyazaki, K. Shiba, K. Sakamoto and M. Hirose / Optoelectronics-Devices and Technologies, Vol. 7, No. 1(1992)pp. 95-102. / Structural Characterization and Luminescence of Porous Si
  11. 宮崎 誠一 / プラズマ材料科学ハンドブック、 日本学術振興会,プラズマ材料科学第153委員会編 (オーム社, , 1992). / 固体表面の解析法-オージェ電子分光、真空紫外/X線光電子分光、電子エネルギー損失分光、ラザフォード後方散乱、走査トンネル顕微鏡
  12. 宮崎 誠一, 廣瀬全孝 / 応用物理, Vol. 61, No. 12(1992). / 水素結合は不要:局在準位を介しての発光の可能性
  13. 宮崎 誠一, 廣瀬全孝 / 固体物理, Vol. 27, No. 11(1992)pp. 803-812. / アモルファスシリコンとその合金-界面
  14. 宮崎 誠一, 柴和利, 坂本邦秀, 廣瀬全孝 / 固体物理, Vol. 27, No. 11(1992)pp. 871-873. / 高温熱酸化したポーラスシリコンからの高効率可視光ルミネッセンス
  15. 廣瀬全孝, 八坂龍広 宮崎 誠一 / 半導体研究「超LSI技術16」第36巻, 西澤潤一編 (工業調査会 , 第9章, 1992)pp. 263-283. / シリコン自然酸化膜の成長機構
  16. 廣瀬全孝, 高倉優, 八坂龍広, 宮崎 誠一 / 表面科学, Vol. 13, No. 6(1992)pp. 324-331. / 水素終端Si表面の自然酸化

1991年度

  1. H. Shin, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 137-138(1991)pp. 713-716. / A New Deposition Mode in Plasma-Enhanced Cryogenic CVD
  2. K. Murayama, S. Miyazaki and M. Hirose / J. Non-Cryst. Solids, Vol. 137-138(1991)pp. 1123-1126. / Phonon Interaction in the Photoluminescence of a-Si:H/a-Si3N4:H Multilayers
  3. S. Miyazaki, K. Yamada and M. Hirose / J. Non-Cryst. Solids, Vol. 137-138(1991)pp. 1119-1122. / Optical and Electrical Properties of a-Si3N4:H/a-Si:H Superlattices Prepared by Plasma-Enhanced Nitridation Technique
  4. K. Kawabata, Y. Shiratsuki, T. Hayashi, K. Yamada, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 30, No. 7B(1991)pp. L1231-L1234. / Diffusion Barrier Effect of Ultra-Thin Photo-Nitrided a-Si:H on SnO2/Glass Substrate
  5. M. Takakura, T. Kinoshita, T. Uranishi, S. Miyazaki, N. Koyanagi and M. Hirose / Jpn. J. Appl. Phys., Vol. 30, No. 12B(1991)pp. 3627-3629. / BF2+ Ion Implantation into Very-Low-Temperature Si Wafer
  6. S. Miyazaki, Y. Kiriki, Y. Inoue and M. Hirose / Jpn. J. Appl. Phys., Vol. 30, No. 7(1991)pp. 1539-1544. / Radical- and Ion-Induced Reactions on Plasma-Deposited Silicon Surface
  7. T. Hayashi, K. Kawabata, K. Yamada, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 30, No. 4B(1991)pp. L675-L678. / Impurity Diffusion Barrier Effect of Ultra-Thin Plasma Nitrided a-Si:H Overlayer on SnO2/Glass Substrate
  8. T. Yasaka, K. Kanda, K. Sawara, S. Miyazaki and M. Hirose / Jpn. J. Appl. Phys., Vol. 30, No. 12B(1991)pp. 3567-3569. / Chemical Stability of HF-Treated Si(100) Surfaces
  9. T. Yasaka, M. Takakura, S. Miyazaki and M. Hirose / Mat. Res. Soc. Symp. Proc., Vol. 222(1991)pp. 225-230. / Layer-by-Layer Oxidation of Silicon
  10. M. Hirose, T. Yasaka, M. Takakura and S. Miyazaki / Solid State Technol., Vol. Dec.(1991)pp. 43-48. / Initial Oxidation of Chemically Cleaned Silicon Surface
  11. 八坂龍広, 宮崎 誠一, 廣瀬全孝, "シリコンウエハの自然酸化", 日本結晶学会誌, Vol. 33(1991)pp. 182-187.